The metallization pattern includes a pair of first metal films on the respective pair of first surfaces, and a second metal film on the pair of second surfaces to connect the pair of first metal films. The support block includes a connection conductor connecting the pair of first metal films, the connection conductor being a castellation conductor and/or a via conductor, the castellation conductor being on the pair of third surfaces of the ceramic body, the via conductor being through the ceramic body between the pair of first surfaces. The mounting substrate is mounted on one of the pair of first surfaces. One end of the first wire is bonded to a corresponding one of the pair of first metal films or the connection conductor, at a position adjacent to or overlapping with the connection conductor, on another of the pair of first surfaces.

The metallization pattern includes a pair of first metal films on the respective pair of first surfaces, and a second metal film on the pair of second surfaces to connect the pair of first metal films. The support block includes a connection conductor connecting the pair of first metal films, the connection conductor being a castellation conductor and/or a via conductor, the castellation conductor being on the pair of third surfaces of the ceramic body, the via conductor being through the ceramic body between the pair of first surfaces. The mounting substrate is mounted on one of the pair of first surfaces. One end of the first wire is bonded to a corresponding one of the pair of first metal films or the connection conductor, at a position adjacent to or overlapping with the connection conductor, on another of the pair of first surfaces.

A semiconductor laser device comprises a semiconductor laser element, a photodetector to receive laser light emitted from the semiconductor laser element, and a stem on which the semiconductor laser element and the photodetector are mounted. The semiconductor laser element is disposed on a side to a stem front face between the stem front face and a farthest portion of the photodetector farthest away from the stem front face of the stem on which the semiconductor laser element and the photodetector are mounted. The photodetector has a light receiving face for receiving the laser light and a reflective film formed thereon in which part of the laser light is transmitted and the rest is reflected, the light receiving face being formed on a side facing the semiconductor laser element.

A semiconductor laser device comprises a semiconductor laser element, a photodetector to receive laser light emitted from the semiconductor laser element, and a stem on which the semiconductor laser element and the photodetector are mounted. The semiconductor laser element is disposed on a side to a stem front face between the stem front face and a farthest portion of the photodetector farthest away from the stem front face of the stem on which the semiconductor laser element and the photodetector are mounted. The photodetector has a light receiving face for receiving the laser light and a reflective film formed thereon in which part of the laser light is transmitted and the rest is reflected, the light receiving face being formed on a side facing the semiconductor laser element.

Provided is an optical subassembly, which is compact, is easy to manufacture, and has satisfactory high-frequency characteristics. The optical subassembly includes: an eyelet including a first surface, a second surface and a plurality of through-holes; a plurality of lead terminals; a relay substrate including a lead connection surface and a first bonding surface and having first and second conductor patterns formed across the lead connection surface and the first bonding surface; a device mounting unit including a second bonding surface having formed thereon third and fourth conductor patterns; and an optical device configured to convert one of an optical signal and the differential electrical signals into the other. The first and second conductor patterns on the first bonding surface are connected to the third and fourth conductor patterns by bonding wires, respectively, and the first and second bonding surfaces have normal directions in the same direction.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.

A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode.

A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device.

A header, with improved cooling for electronic components for radio frequency signal transmission, for an electronic component for radio frequency data transfer, includes: a metallic base body including a plurality of electrical feedthroughs; a thermoelectric cooling element having one side bearing on the base body and an opposite side for mounting the electronic component; a radio frequency line to the electronic component being on the side for mounting the electronic component, with a ground conductor that is electrically connected to the metallic base body, the electrical connection to the metallic base body including a telluride element.