A laser device includes: a semiconductor laser, at least one driver that supplies the semiconductor laser with a current; a modulator that modulates the current supplied to the semiconductor laser; and at least one electric line for conveying the current from at least one driver to the semiconductor laser. The at least one electric line is a wire in a form of a tape, and includes the first conductive layer, the second conductive layer, and the insulating layer which are extending in the longitudinal direction of the wire. The first conductive layer and the second conductive layer are stacked, with the insulating layer in between, in the direction of thickness of the wire.

A semiconductor laser device A1 comprises a semiconductor laser chip 2 and a stem 1. The stem 1 includes a base 11 and leads 3A, 3B, and 3C fixed to the base, and supports the semiconductor laser chip 2. The semiconductor laser device A1 further comprises a first metal layer 15 including a first layer 151 covering the base 11 and the leads 3A, 3B, and 3C, a second layer 152 interposed between the first layer 151 and each of the base 11 and the leads 3A, 3B, and 3C, and a third layer 153 interposed between the second layer 152 and each of the base 11 and the leads 3A, 3B, and 3C. Crystal grains in the second layer 152 are smaller than crystal grains in the third layer 153. Such a configuration can suppress corrosion.

A semiconductor laser device A1 comprises a semiconductor laser chip 2 and a stem 1. The stem 1 includes a base 11 and leads 3A, 3B, and 3C fixed to the base, and supports the semiconductor laser chip 2. The semiconductor laser device A1 further comprises a first metal layer 15 including a first layer 151 covering the base 11 and the leads 3A, 3B, and 3C, a second layer 152 interposed between the first layer 151 and each of the base 11 and the leads 3A, 3B, and 3C, and a third layer 153 interposed between the second layer 152 and each of the base 11 and the leads 3A, 3B, and 3C. Crystal grains in the second layer 152 are smaller than crystal grains in the third layer 153. Such a configuration can suppress corrosion.

An optical apparatus includes a light emitting module having a light emitting device, the light emitting device having a first semiconductor layer, a core layer, and a second semiconductor layer laminated in order, and an optical element on which a light emitted from the light emitting module is incident. The first semiconductor layer, the core layer, and the second semiconductor layer are arranged along a lamination direction. The lamination direction is inclined with respect to a direction perpendicular to an optical axis of the optical element.

Devices, apparatus, systems and methods for providing accurate linear and angular positioning with a payload mounted to a beam having freely moveable ends. The payload can be a laser pointer mounted on a firearm, which maintains the initial precise pointing during and after exposure in high G shock and vibration environments. Vertical and lateral adjustment controls can adjust minute changes in beam orientation. Precision adjustments can be performed in a zero G, one G, or high G environment and maintains the adjustment during and after being exposed to a high G shock or vibration environment.

Devices, apparatus, systems and methods for providing accurate linear and angular positioning with a payload mounted to a beam having freely moveable ends. The payload can be a laser pointer mounted on a firearm, which maintains the initial precise pointing during and after exposure in high G shock and vibration environments. Vertical and lateral adjustment controls can adjust minute changes in beam orientation. Precision adjustments can be performed in a zero G, one G, or high G environment and maintains the adjustment during and after being exposed to a high G shock or vibration environment.

The invention relates to a laser chip located between a first and a second electrically and thermally conductive component, wherein: a first lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the first component; the second lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the second component; the laser chip has a radiation side which is located between the components; the radiation side is arranged set back inwardly at a predefined distance from the first end faces of the components; and a radiation space, which extends from the radiation side of the laser chip to the first end faces of the components is formed between the first lateral surfaces of the two components and adjacent to the radiation side of the laser chip.

The optical module which is disclosed in the present application comprises a plate-like metal stem in which a metallic lead pin is inserted in a through-hole so as to be coaxial with the through-hole and one sheet of a dielectric substrate which is equipped with a high-frequency signal line to be connected to the lead pin and a semiconductor optical integrated element, in which a semiconductor laser and an optical modulator are integrated, and which is connected to the high-frequency signal line with a bonding wire, wherein one side surface of the dielectric substrate extends in a direction perpendicular to the light axis direction of the semiconductor optical integrated element, and the side surface of the dielectric substrate is arranged in contact with a surface of the metal stem.

A semiconductor laser device includes a semiconductor laser element, a sub mount member, a mount section having an upper surface on which the semiconductor laser element is mounted with the sub mount member interposed therebetween, a lead pin disposed at left and right sides of the mount section, a retainer that retains the mount section and the lead pin together and that is composed of an insulative material, and a protrusion protruding toward the left and right sides of the mount section. A lower surface of the mount section is parallel to an upper surface of the mount section and protrudes from a lower surface of the retainer.

An optical semiconductor device comprises: a first wiring pattern provided on a carrier mounting surface of a dielectric substrate; a first reference potential pattern surrounding the first wiring pattern; a carrier block provided on the carrier mounting surface and having a main surface, a side surface, and a second wiring pattern and a second reference potential pattern constituting coplanar lines; and an optical semiconductor element provided on the main surface. One end portion of the second wiring pattern extends to at least an end edge on the side surface side in the main surface and is conductively joined to the first wiring pattern with a conductive joining material therebetween. One end portion of the second reference potential pattern extends to at least the end edge on the side surface side in the main surface and is conductively joined to the first reference potential pattern with a conductive joining material therebetween.