A method for use in manufacturing an optical emitter arrangement comprises holding an electrically conductive base member and two electrically conductive base elements in a predetermined spatial relationship, and providing two electrically conductive projections, wherein each projection extends in a direction away from a surface of a corresponding one of the base elements and wherein each projection terminates at a corresponding outer end. The method further comprises bringing a projecting portion of a surface profile of a mold tool into engagement with an area of a surface of the base member whilst bringing other portions of the surface profile of the mold tool into engagement with the outer ends of the projections so as to form a void that extends away from the surface of the base member around the projecting portion of the surface profile of the mold tool and that extends away from the surface of each of the base elements around each projection without extending over the outer end of each projection. The method further comprises injecting an electrically insulating plastic material into the void and curing the plastic material so as to form an electrically insulating housing that extends away from the surface of the base member so as to define a space for accommodating an optical emitter device, wherein the space extends away from the area of the surface of the base member, and wherein the housing also extends away from the surface of each of the base elements around each projection without covering the outer end of each projection. The method may be used, in particular though not exclusively, for manufacturing an optical emitter arrangement for a projector or an illuminator such as flood illuminator.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.

A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode.

A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device.

An electronic element housing package includes a base and a lead frame. The base is made of resin. The lead frame includes a portion positioned inside the base and another portion exposed from the base. The base includes a recess including a step portion. The lead frame includes a lead surface, a first extension portion, and a second extension portion. The lead surface is exposed at the step portion and has a first side and a second side. The first extension portion extends outward from the lead surface beyond the first side. The first extension portion is positioned inside the base. The second extension portion extends outward from the lead surface beyond the second side. The second extension portion is positioned inside the base. The first side and the second side are two sides not facing one another.

Provided is a laser. The laser includes: a base plate, an annular side wall, a plurality of conductive pins, a plurality of light-emitting chips, and a plurality of conductive wires; wherein the side wall and the plurality of light-emitting chips are disposed on the base plate, the side wall surrounds the plurality of light-emitting chips, the plurality of conductive pins are extended through the side wall and are affixed into the side wall, and sides, distal from the base plate, of portions of the plurality of conductive pins surrounded by the side wall include planar regions, wherein the planar region of each of the plurality of conductive pins is connected to the light-emitting chip via the conductive wire.

A laser package is mounted on the printed circuit board. At least one thermal via extends through the printed circuit board, coupled to the laser package. A thermal bridge is coupled to the at least one thermal via on the bottom of the printed circuit board. A thermal paste connects the thermal bridge to a conductive ground plane on the bottom of the printed circuit board, and to a mechanical housing.

The invention relates to an optoelectronic component comprising a housing, an optoelectronic semiconductor chip and an optical element. The housing comprises a lead frame which has two external electrical contact points and two contact portions. The housing also comprises a housing body in which the lead frame is embedded, wherein each contact portion extends laterally out of one of the external electrical contact points in each case to a mounting surface of the housing, and therefore contact surfaces of the contact portions are exposed on the mounting surface. An electrical contact structure of the optical element is electrically conductively connected to the contact surfaces of the contact portions.