A semiconductor light emitting device includes a substrate, a first epitaxial structure and a second epitaxial structure, a connecting layer, a first electrode structure, a second electrode structure, and a third electrode structure. The first epitaxial structure and the second epitaxial structure are on the substrate side by side. The connecting layer is between the first epitaxial structure and the substrate, between the second epitaxial structure and the substrate, and between the first epitaxial structure and the second epitaxial structure. The first electrode structure is on the first epitaxial structure away from the substrate. The second electrode structure is on the second epitaxial structure away from the substrate. The third electrode structure is connected to the connecting layer.

A semiconductor light-emitting device, includes: a semiconductor light-emitting element; a support including a base and a conductive part and configured to support the semiconductor light-emitting element; and a cover configured to overlap the semiconductor light-emitting element as viewed in a first direction, and to transmit light from the semiconductor light-emitting element, wherein the cover includes a base layer having a front surface and a rear surface which transmit the light from the semiconductor light-emitting element and face opposite sides to each other in the first direction, wherein the rear surface faces the semiconductor light-emitting element, wherein the base layer includes a plurality of undulation parts bonded to the support by a bonding material, and wherein the undulation parts are more uneven than the rear surface.

A semiconductor laser includes an active layer which emits laser light and cladding layers being formed so as to sandwich the active layer. The active layer includes a quantum dot layer including a plurality of quantum dots, which respectively confine movements of carriers in the three-dimensional directions. The laser radar device includes a light projection part which projects laser light and a light receiving part which receives reflected light of the laser light. The light projection part includes the semiconductor laser and a scanner which reflects the laser light, emitted from the semiconductor laser, to form a scanning laser light.

In some embodiments, the present disclosure relates to a method of making a microlens for a VCSEL device. The method includes forming a first lens layer over a second reflector layer. The first lens layer has a first average concentration of a first element. A first additional reflector layer is formed over the first lens layer. A second lens layer is formed over the first additional reflector layer. The second lens layer has a second average concentration of the first element greater than the first average concentration. A second additional reflector layer is formed over the second lens layer. An oxidation process is performed to oxidize peripheral portions of the first and second lens layers to form oxidized peripheral portions of the first and second lens layer. The oxidized peripheral portions of the second lens layer are wider than the oxidized peripheral portions of the first lens layer.

A vertical cavity surface emitting laser (VCSEL) device includes a microlens arranged over a reflector stack. The reflector stack includes alternating reflector layers of a first material and a second material. The microlens stack includes a first lens layer, a second lens layer arranged over the first lens layer, and a third lens layer arranged over the second lens layer. The first lens layer includes a first average concentration of a first element and has a first width. The second lens layer includes a second average concentration of the first element greater than the first average concentration and has a second width smaller than the first width. The third lens layer includes a third average concentration of the first element greater than the second average concentration and has a third width smaller than the second width.

A method for assembling a beam combiner array including providing an array block having a back wall, a front surface and a plurality of aligned channels extending from the back wall to the front surface, where a bore extends through the back wall and into each channel, and providing a lens array including a plurality of lenses. The method further includes securing the lens array to the front surface of the block so that one of the lenses is aligned with each channel and threading a separate hollow core fiber through one of the bores in the back wall so that an end of the fiber is positioned within the channel. The method also includes aligning each fiber to the lens array so that a beam that propagates down the fiber is emitted into the channel, focused by the lens and emitted from the array as a collimated beam.

A method for assembling a beam combiner array including providing an array block having a back wall, a front surface and a plurality of aligned channels extending from the back wall to the front surface, where a bore extends through the back wall and into each channel, and providing a lens array including a plurality of lenses. The method further includes securing the lens array to the front surface of the block so that one of the lenses is aligned with each channel and threading a separate hollow core fiber through one of the bores in the back wall so that an end of the fiber is positioned within the channel. The method also includes aligning each fiber to the lens array so that a beam that propagates down the fiber is emitted into the channel, focused by the lens and emitted from the array as a collimated beam.

An optical semiconductor device includes an optical semiconductor chip in which at least one optical element is formed in a semiconductor substrate, and an extended wire pattern that is connected to a first electrode and a second electrode of the optical element and that extends outside the optical semiconductor chip. The first electrode and the second electrode of the optical semiconductor device are formed on the front surface side of the optical semiconductor chip, and the extended wire pattern is disposed on the front surface of the optical semiconductor chip or disposed at a position apart from the front surface.

The invention relates to a laser chip located between a first and a second electrically and thermally conductive component, wherein: a first lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the first component; the second lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the second component; the laser chip has a radiation side which is located between the components; the radiation side is arranged set back inwardly at a predefined distance from the first end faces of the components; and a radiation space, which extends from the radiation side of the laser chip to the first end faces of the components is formed between the first lateral surfaces of the two components and adjacent to the radiation side of the laser chip.

A Vertical Cavity Surface Emitting Laser (VCSEL) array package includes a VCSEL array chip bonded on a substrate, a support structure surrounding the VCSEL array chip, and an optical component mounted on the support structure. The support structure is molded directly on the substrate using a high thermal conductivity molding material. The support structure covers all side surfaces of the VCSEL array chip to facilitate heat transfer through the chip's sides. A transparent layer is deposited on the output surface of the VCSEL array chip, which prevents the support structure from blocking an output beam during molding.