A semiconductor optical device includes: a first conductive type semiconductor layer; an active layer; a second conductive type semiconductor layer including a ridge portion; a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer; an optical functioning part including the first and second conductive type semiconductor layers, converting a state of light, and having a height higher than a height of the bottom surface of the ridge portion; and a second groove, at least a part thereof being formed on the optical functioning part, an end portion thereof being connected to the first groove, the second conductive type semiconductor layer being divided, and the maximum height of an inner wall surface thereof being higher than the maximum height of an inner wall surface of the first groove.

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

A Vertical Cavity Surface Emitting Laser (VCSEL) array package includes a VCSEL array chip bonded on a substrate, a support structure surrounding the VCSEL array chip, and an optical component mounted on the support structure. The support structure is molded directly on the substrate using a high thermal conductivity molding material. The support structure covers all side surfaces of the VCSEL array chip to facilitate heat transfer through the chip's sides. A transparent layer is deposited on the output surface of the VCSEL array chip, which prevents the support structure from blocking an output beam during molding.

A Vertical Cavity Surface Emitting Laser (VCSEL) array package includes a VCSEL array chip bonded on a substrate, a support structure surrounding the VCSEL array chip, and an optical component mounted on the support structure. The support structure is molded directly on the substrate using a high thermal conductivity molding material. The support structure covers all side surfaces of the VCSEL array chip to facilitate heat transfer through the chip's sides. A transparent layer is deposited on the output surface of the VCSEL array chip, which prevents the support structure from blocking an output beam during molding.

Optoelectronic devices and method of forming the same include an optoelectronic component in a substrate layer. An integrated circuit chip is positioned on the substrate layer. A lens is positioned on the substrate layer directly above the optoelectronic component and above at least part of the integrated circuit chip. The lens has a cut-out portion that accommodates the integrated circuit chip.

Optoelectronic devices and method of forming the same include an optoelectronic chip in a substrate layer, the optoelectronic chip having one or more optoelectronic components. An integrated circuit chip is positioned on the substrate layer. A lens array is positioned on the substrate layer above the optoelectronic chip and above at least part of the integrated circuit chip. The lens array includes one or more lens positioned directly respective optoelectronic components.

Optoelectronic devices and method of forming the same include an optoelectronic chip in a substrate layer, the optoelectronic chip having one or more optoelectronic components. An integrated circuit chip is positioned on the substrate layer. A lens array is positioned on the substrate layer above the optoelectronic chip and above at least part of the integrated circuit chip. The lens array includes one or more lens positioned directly respective optoelectronic components.

A semiconductor optical device includes: a first conductive type semiconductor layer; an active layer; a second conductive type semiconductor layer including a ridge portion; a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer; an optical functioning part including the first and second conductive type semiconductor layers, converting a state of light, and having a height higher than a height of the bottom surface of the ridge portion; and a second groove, at least a part thereof being formed on the optical functioning part, an end portion thereof being connected to the first groove, the second conductive type semiconductor layer being divided, and the maximum height of an inner wall surface thereof being higher than the maximum height of an inner wall surface of the first groove.

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

A semiconductor laser element includes a plurality of three or more laser resonators integrated adjacent to each other in the first direction. Each laser resonator has an independent power supply electrode, a second direction which is regarded as a longitudinal direction, and an end face which is coated. A plurality of electrode pads are formed in a pad region adjacent to the laser region in the first direction. Each of the wirings for connection extends in the first direction and is electrically connected the power supply electrode of the corresponding laser resonator and the corresponding electrode pad. The thick film pad is formed on the pad region and is higher than the multilayered wiring structure of the wirings for connection.