A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

A semiconductor laser module includes a semiconductor laser element that outputs a laser beam, a cathode that is for causing a current to flow through the semiconductor laser element, and a heat sink that dissipates heat generated in the semiconductor laser element. The heat sink includes an anode, a first insulating layer located at a position farther away from the semiconductor laser element than the anode, and a water passage portion located at a position farther away from the semiconductor laser element than the first insulating layer. The water passage portion is formed by metal and includes a part of a flow path of water for dissipation of heat generated in the semiconductor laser element.

A monolithic edge emitting semiconductor laser comprising multiple laser diodes using aluminum indium gallium arsenide phosphide AlInGaAs/InGaAsP/InP material system, emitting in long wavelengths (1250 nm to 1720 nm). Each laser diode contains an active region comprising aluminium indium gallium arsenide quantum wells (AlInGaAs QW) and aluminum indium gallium arsenide (AlInGaAs) barriers and is connected to the subsequent monolithic laser diode by highly doped, low bandgap and low resistive indium gallium arsenide junction called tunnel junction.

A monolithic edge emitting semiconductor laser comprising multiple laser diodes using aluminum indium gallium arsenide phosphide AlInGaAs/InGaAsP/InP material system, emitting in long wavelengths (1250 nm to 1720 nm). Each laser diode contains an active region comprising aluminium indium gallium arsenide quantum wells (AlInGaAs QW) and aluminum indium gallium arsenide (AlInGaAs) barriers and is connected to the subsequent monolithic laser diode by highly doped, low bandgap and low resistive indium gallium arsenide junction called tunnel junction.

The invention relates to a laser assembly (1) comprising a diode laser bar (2), a heat sink (4) and at least one cover (7). The laser bar is located between the heat sink and the cover. The heat sink and/or the cover is/are coated with nanowires (16) or nanotubes via which the contact between the laser bar and the heat sink and/or the cover is established.

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

A symmetric distributed feedback (DFB) laser that is integrated in a silicon based photonic integrated circuit can output light from both sides of the symmetric DFB laser onto waveguides. The light in the waveguides can be phase adjusted and combined using an optical coupler. The symmetric DFB laser can generate light and symmetrically output light onto different lanes of a multi-lane transmitter.

A light source device in which a plurality of semiconductor light-emitting elements are disposed, each of the plurality of semiconductor light-emitting elements being configured with a first reflector, a resonator cavity including an active layer, and a second reflector which are stacked in this sequence on a semiconductor substrate, wherein in each of the semiconductor light-emitting elements, an electric contact region for supplying carriers to the active layer is disposed on a surface of the second reflector on an opposite side thereof to the active layer, and wherein the plurality of semiconductor light-emitting elements include a first semiconductor light-emitting element of which shape of the contact region is a first shape, and a second semiconductor light-emitting element of which shape of the contact region is a second shape which is different from the first shape.