A method of manufacturing a light emitting module comprising at least one light emitting device in which a plurality of light emitting elements are mounted, includes: providing a plurality of light emitting devices including one or more first light emitting devices and one or more second light emitting devices, wherein a number of the light emitting elements mounted in the first light emitting device is different from a number of the light emitting elements mounted in the second light emitting device; providing a first mounting substrate having a mounting surface provided with a plurality of connection patterns having the same pattern, each of the connection patterns corresponding to a respective one of the light emitting devices; and mounting at least some of the plurality of light emitting devices, selected from the one or more first light emitting devices and one or more second light emitting devices, on the connection patterns.

A 2nd signal line has impedance lower than impedance of a 1st signal line. A capacitor includes a 1st extension part and a 2nd extension part, a 1st ground part and a 2nd ground part. The 1st extension part and the 2nd extension part are connected to a 2nd signal line and are provided on an insulation substrate to extend along a longitudinal direction of the 2nd signal line. The 1st ground part and the 2nd ground part are at least a part of a ground pattern, and are provided between the 1st extension part and the 2nd extension part and the 2nd signal line, and between the 1st extension part and the 2nd extension part and an end part of the insulation substrate, to be electrically coupled with the 1st extension part and the 2nd extension part.

Provided is a method for manufacturing a component arrangement for a package, including providing a wafer made of a semiconductor material having a polished wafer surface; forming an opening in the wafer by anisotropic etching, wherein an anisotropically etched surface is manufactured near the opening; separating a component from the anisotropically etched wafer, wherein the separated component is manufactured having the following surfaces: an optical surface formed near a surface portion of the polished wafer surface and a mounting surface formed in the region of the anisotropically etched surface; and mounting the separated component on a substrate surface of a carrier substrate using the mounting surface in such a manner that the anisotropically etched surface is bonded to the substrate surface, wherein the optical surface is arranged as an inclined exposed surface. Furthermore, a component arrangement and a package are provided having a component arrangement.

The semiconductor laser element includes: a substrate; a first semiconductor layer disposed above a main surface of the substrate; an active layer that is disposed above the first semiconductor layer and generates light; and a second semiconductor layer) disposed above the active layer. In a top view of a front-side end portion of the semiconductor laser element from which the light is emitted, an end surface of the second semiconductor layer includes an inclined portion with respect to an end surface of the first semiconductor layer.

A laser light source includes: a submount having an upper surface; a semiconductor laser element located on the upper surface of the submount and having an end surface from which a laser beam is emitted; a lens facing the end surface of the semiconductor laser element; and a support member located on the upper surface of the submount and supporting the lens. The lens includes a collimating portion configured to collimate the laser beam emitted from the semiconductor laser element. The support member includes: a first portion and a second portion arranged at a lateral side of the submount; and a third portion that connects the first portion and the second portion and overlaps a portion of the semiconductor laser element in a plan view. The lens is supported by the first portion and the second portion via a bonding member.

A laser light source includes: a submount having an upper surface; a semiconductor laser element located on the upper surface of the submount and having an end surface from which a laser beam is emitted; a lens facing the end surface of the semiconductor laser element; and a support member located on the upper surface of the submount and supporting the lens. The lens includes a collimating portion configured to collimate the laser beam emitted from the semiconductor laser element. The support member includes: a first portion and a second portion arranged at a lateral side of the submount; and a third portion that connects the first portion and the second portion and overlaps a portion of the semiconductor laser element in a plan view. The lens is supported by the first portion and the second portion via a bonding member.

An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that is provided on plural wires connected to the light source and holds the light diffusing member.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that is provided on plural wires connected to the light source and holds the light diffusing member.

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.