In a laser light emitting device including a plurality of laser light emitter each including a laser diode, a drive circuit configured to drive the laser diode by controlling the supply of a drive current to the laser diode, and a drive line through which the drive current flows from the drive circuit to the laser diode, a light emission detector includes a detection pattern placed so as to cause an electromagnetically induced current to flow in response to a drive current flowing through each drive line when the corresponding laser light emitter emits light. The light emission detector detects light emission from a driven laser diode by detecting the current flowing in the detection pattern.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

A photonic-device-mounting package has a base having plural mounting portions. Each of the plural mounting portions has a first mounting portion on which a light-emitting device is mounted and a second mounting portion on which an optical component is mounted, the second mounting portion being at a position in a light emission direction of the light-emitting device. The base has a first wall disposed between two mounting portions arranged next to one another in the light emission direction, the first wall having a height larger than the height of the first mounting portion.

A circuit (e.g., for use in a time-of-flight camera projector module) may include a top metal layer having an anode and a cathode, one or more capacitors connected to the anode, a vertical-cavity surface-emitting laser connected to the anode and the cathode, and a driver connected to the cathode. The circuit may further include a bottom metal layer connected to ground and arranged below the top metal layer, and a dielectric layer separating the top metal layer and the bottom metal layer. In some implementations, the dielectric layer has a thickness under sixty micrometers and a thermal resistance under fifteen degrees Celsius per watt. Accordingly, a current loop flowing vertically across the dielectric layer has a low self-inductance based on the thickness of the dielectric layer and the bottom metal layer is arranged to dissipate heat generated by the current loop flowing vertically across the dielectric layer.

An optical-device-mounting package includes a base member having an upper surface and a slope, the slope being continuous with the upper surface and sloping downward in a direction away from the upper surface; and an optical component having a first face and a second face, the second face being positioned opposite the first face. At least a part of the optical component is at a position higher than the upper surface, with at least a part of the second face being bonded to the slope with a bonding material. The bonding material spreads from an area between the second face and the slope up to an area between the second face and the base member and higher than the upper surface.

A light emitting device includes: at least one semiconductor laser element; a submount; and a base portion having a mounting surface. The submount includes: a first lateral face being located at a side of an exiting lateral surface of the semiconductor laser element, the first lateral face intersecting the upper face of the submount, and the first lateral face being above and separated from the mounting surface; a lower face being set back inside of the submount relative to an edge at which the upper face and the first lateral face intersect in a top view; and a second lateral face being located at the same side as the first lateral face and intersecting the lower face. A portion of a bonding material protrudes from the lower face and extends outward of an edge at which the lower face and the second lateral face intersect.

A light emitting device includes: at least one semiconductor laser element; a submount; and a base portion having a mounting surface. The submount includes: a first lateral face being located at a side of an exiting lateral surface of the semiconductor laser element, the first lateral face intersecting the upper face of the submount, and the first lateral face being above and separated from the mounting surface; a lower face being set back inside of the submount relative to an edge at which the upper face and the first lateral face intersect in a top view; and a second lateral face being located at the same side as the first lateral face and intersecting the lower face. A portion of a bonding material protrudes from the lower face and extends outward of an edge at which the lower face and the second lateral face intersect.

Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.

An array type semiconductor laser device includes: a second electrode (p-electrode) disposed on another conductivity type semiconductor layer; a third electrode (n-electrode) disposed on a one conductivity type semiconductor layer and between a first electrode (p-electrode) and the second electrode; a fifth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and between the third electrode and the second electrode; a sixth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and across from the fifth electrode; a first conductor (wire) that electrically connects the second electrode and the third electrode; and a second conductor (n-wiring) that electrically connects the fifth electrode and the sixth electrode.

A light source module includes a first semiconductor laser element hermetically sealed, a second semiconductor laser element hermetically sealed, and firth to fourth optical elements. A first laser beam prior to reaching the first optical element has divergence angle θfd1 in a direction along a second optical axis and divergence angle θsd1 in a direction along a third optical axis, and satisfy 90°>θfd1>θsd1>0°. Divergence angle θfd12 of a first laser beam in the direction along the second optical axis decreases from divergence angle θfd1, the first laser beam having exited the first optical element. A component of a first laser beam in the direction along the second optical axis is collimated, the first laser beam having exited the second optical element. The same applies to the second semiconductor laser element.