An optoelectronic component (1) is specified having: an optoelectronic semiconductor chip (2) which generates electromagnetic radiation during operation, and a metallic layer (3) which is arranged on the semiconductor chip (2), wherein an outer surface of the metallic layer (4) has a structuring (5), identification of the component (1) is made possible by means of the structuring (5), and the metallic layer (3) is formed continuously.

Furthermore, a method for producing an optoelectronic component (1) is specified.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

A light emitting device includes one or more electrical components and a base member. The electrical components include a first semiconductor laser element, which has a light emission end surface. The base member has a first surface on which the first semiconductor laser element is disposed. The base member includes a plurality of metal films including a first metal film and a second metal film. The first metal film is electrically connected to at least one of the electrical components, and defines a first alignment mark for aligning the first semiconductor laser element. The second metal film is electrically connected to at least one of the electrical components, and defines a second alignment mark for aligning the first semiconductor laser element. A straight line connecting the first alignment mark and the second alignment mark extends parallel to the light emission end surface of the first semiconductor laser element.

A light emitting device includes one or more electrical components and a base member. The electrical components include a first semiconductor laser element, which has a light emission end surface. The base member has a first surface on which the first semiconductor laser element is disposed. The base member includes a plurality of metal films including a first metal film and a second metal film. The first metal film is electrically connected to at least one of the electrical components, and defines a first alignment mark for aligning the first semiconductor laser element. The second metal film is electrically connected to at least one of the electrical components, and defines a second alignment mark for aligning the first semiconductor laser element. A straight line connecting the first alignment mark and the second alignment mark extends parallel to the light emission end surface of the first semiconductor laser element.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

A semiconductor laser device includes a submount, a semiconductor laser element, and a bonding material. The semiconductor laser element includes a substrate and a layered structure, and is disposed with the layered structure facing the submount. A waveguide extending in a first direction parallel to the main surface of the substrate is formed in the layered structure. The bonding material includes an inner region bonded to the semiconductor laser element and one outer region located outward of the inner region. The one outer region is spaced apart from one side surface of the semiconductor laser element. Width A of the semiconductor laser element and width B of the one outer region in a second direction perpendicular to the first direction and parallel to the main surface of the substrate satisfy B≥A/4.

The present disclosure describes optoelectronic modules that include an optical system tilted with respect to a focal plane. For example, an optoelectronic module can includes an optical system including a vertical alignment feature. An optoelectronic sub-assembly includes an active optoelectronic device, wherein the vertical alignment rests on a surface of the optoelectronic sub-assembly and wherein an optical axis of the optical system is tilted with respect to a focal plane in the sub-assembly.

A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.