A method of manufacturing an optical engine includes bonding a plurality of laser diodes directly or indirectly to a base substrate and coupling at least one laser diode driver circuit to the laser diodes. In operation the at least one laser diode driver circuit selectively drives current to the laser diodes. The method further includes bonding a plurality of collimation lenses to the base substrate proximate the plurality of laser diodes and bonding a cap including at least one wall and at least one optical window to the base substrate. The method also includes bonding a grating waveguide combiner proximate the optical window of the cap. In operation, the grating waveguide combiner receives a plurality of beams of light at a respective plurality of input grating couplers and combines the plurality of beams of light to provide a collimated aggregated beam of light at an output grating coupler.

A method of manufacturing an optical engine includes bonding a plurality of laser diodes directly or indirectly to a base substrate and coupling at least one laser diode driver circuit to the laser diodes. In operation the at least one laser diode driver circuit selectively drives current to the laser diodes. The method further includes bonding a plurality of collimation lenses to the base substrate proximate the plurality of laser diodes and bonding a cap including at least one wall and at least one optical window to the base substrate. The method also includes bonding a grating waveguide combiner proximate the optical window of the cap. In operation, the grating waveguide combiner receives a plurality of beams of light at a respective plurality of input grating couplers and combines the plurality of beams of light to provide a collimated aggregated beam of light at an output grating coupler.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

The present disclosure provides a distance detection system having at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength and reemit a second light with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The distance detecting system further includes one or more first optical elements configured to transmit a first sensing light signal, and a detector configured to detect reflected signals of the first sensing light signal.

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

A vertical cavity surface emitting laser (VCSEL) die package includes a bottom substrate comprising a bottom contact pad electrically contacting a bottom electrode on a bottom surface of a VCSEL die. The VCSEL die package includes a submount including a submount contact pad electrically contacting a first electrode on another surface of the VCSEL die. The submount contact pad overlaps a portion of the first electrode, wherein the VCSEL die is positioned between the submount and the bottom substrate.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.