A tunable laser has a solid state laser medium with optical gain region and generates coherent radiation through a facet. A lens collects the coherent radiation and generates a collimated light beam. An external cavity includes a reflective surface and an optical filter, the reflective surface reflecting the collimated beam back to the lens and laser medium, the optical filter positioned between the reflective surface and the lens and having two surfaces and a thermally tunable optical transmission band within the optical gain region of the laser medium. The optical filter (1) transmits a predominant portion of the collimated beam at a desired wavelength of operation, and (2) specularly reflects a remaining portion of the collimated beam from each surface, the collimated beam being incident on the optical filter such that the reflected collimated beams propagate at a non-zero angle with respect to the incident collimated beam.

An optical module includes a first optical function device that has an emission end and emits a light from the emission end; a second optical function device that has an entry end and an emission end, amplifies the light entering the entry end, and emits the amplified light from the emission end, wherein the light is emitted from the emission end of the first optical function device and enters the entry end; a first optical non-reciprocal device that is arranged between the emission end of the first optical function device and the entry end of the second optical function device, transmits a light in a first direction from the emission end of the first optical function device toward the entry end of the second optical function device, and blocks or attenuates a light in a second direction opposite to the first direction; and a second optical non-reciprocal device that is arranged on the emission end side of the second optical function device, transmits a light in a third direction outward from the emission end of the second optical function device, and blocks or attenuates a light in a fourth direction opposite to the third direction.

A narrow-band diode pumped alkali laser (DPAL) comprising a diode emitter assembly of broad area diode lasers arranged in a stack or array to emit longitudinally at a power level in a power range of 10-1500 W through a frequency selective element assembly aligned and positioned in an external laser cavity to the diode emitter assembly. The frequency selective element assembly comprising: an optical cell containing alkali vapor positioned between a pair of crossed polarizers; a partially reflective mirror that reflects a portion of light passing through the optical cell back toward the diode emitter assembly; and magnetic field producing components that produce a magnetic field through the optical cell that creates a 90 polarization of light passing through the optical cell at a narrow-band frequency corresponding to the absorption line of alkali atom, attenuating components of the light passing through the optical cell at frequencies outside of the narrow-band frequency.

An atomic oscillator includes a semiconductor laser, an atomic cell, a light receiving element, a first temperature control element, a heat transfer member, and a second temperature control element. The laser includes a resonator and an insulation layer disposed around the resonator. The resonator includes a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer and the second mirror layer. The atomic cell is irradiated with light emitted from the semiconductor laser. In the atomic cell, an alkali metal atom is accommodated. The light receiving element detects intensity of light transmitted through the atomic cell and outputs a detection signal. The first temperature control element controls a temperature of the semiconductor laser. The heat transfer member is disposed in the insulation layer. The second temperature control element is controlled based on the detection signal and is connected to the heat transfer member.

An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant <10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 m between the photodiode substrate and the first heat sink.

Provided are: a light source module capable of having a reduced packaging area size while ensuring wavelength precision; and a method for manufacturing this light source module. This light source module is provided with a light amplifying means, a wavelength monitoring means for detecting a change in wavelength of light outputted from the light amplifying means, and a reflecting means which is disposed between the light amplifying means and the wavelength monitoring means, and which is for reflecting the light outputted from the light amplifying means toward the wavelength monitoring means.

A mirror driving mechanism includes a plate-shaped base portion, a mirror that is installed at the base portion, and a temperature detecting section that is installed at the base portion and that detects a temperature of the base portion. The base portion includes a thin portion that is disposed away from an outer edge of the base portion and that has a through hole extending through the base portion in a plate-thickness direction of the base portion, a thick portion that is connected to the thin portion, that is thicker than the thin portion in the plate-thickness direction of the base portion, and that extends along the outer edge so as to surround the thin portion, and a first shaft portion extends into the through hole from an outer periphery of the through hole.

A semiconductor laser module includes a semiconductor laser that outputs laser light; an optical fiber that guides the laser light; a lens that couples the laser light, which is output from the semiconductor laser, with the optical fiber; a base that is substantially tabular in shape and that has the semiconductor laser, the optical fiber, and the lens fixed thereon either directly or indirectly; and a housing which houses the base and fixes the base either directly or indirectly. Among faces of the base, a face on a side that is fixed either directly or indirectly to the housing includes a junction plane that is joined to the housing either directly or indirectly, and a detachment plane that is detached to remain unfixed from the housing.

A semiconductor laser apparatus includes a semiconductor optical integrated device including a semiconductor laser array including a plurality of semiconductor laser elements, a semiconductor arrayed waveguide grating, made of a semiconductor, including an inputting slab waveguide connected to the plurality of the semiconductor laser elements, an array waveguide connected to the inputting slab waveguide and including a plurality of waveguides having different lengths from each other and arranged in a parallel manner, and an outputting slab waveguide connected to the array waveguide; a substrate on which the semiconductor laser array and the semiconductor arrayed waveguide grating are monolithically integrated; and an output facet outputting a laser light emitted from the semiconductor laser elements and including an output end of the outputting slab waveguide.

The present invention relates to a semiconductor laser device capable of reducing a measurement error of a temperature detecting element for detecting the temperature of a semiconductor laser element and accurately controlling the temperature of the semiconductor laser element. The semiconductor laser device is used for optical analysis and includes: a semiconductor laser element; a temperature detecting element that detects the temperature of the semiconductor laser element; output terminals that output the output of the temperature detecting element to the outside; wires that electrically connect the temperature detecting element and the output terminals; and a heat capacity increasing part that is provided interposed between the temperature detecting element and output terminal, and the output terminal, and contacts with at least part of the wires to increase the heat capacity of the wires.