A surface-emitting semiconductor laser includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer. The active layer and the second-conductivity-type layer are electrically connected in a current constriction layer through an opening. The surface-emitting semiconductor laser further includes an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer. In the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and a second portion that has a second thickness to make output of light emitted from the active layer smaller than the first portion in comparison with the first thickness and that surrounds the first portion.

Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.

Tunable VCSELs (TVCSELs) employing expanded material systems with expanded mechanical/optical design space for semiconductor DBR mirrors on GaAs substrates. One is the InGaAs/AlGaAsP material system. It adds indium In to decrease InGaAs H-layer bandgap for higher refractive index and higher DBR layer refractive index contrast. Adding phosphorus P gives independent control of bandgap and strain of AlGaAsP low refractive index L-layers. The tensile strain of AlGaAsP L-layer compensates compressive strain of InGaAs H-layer and lowers the cumulative strain of the multilayer DBR structure. Another option is the InGaAsN(Sb)/AlGaAsP material system, where both types of layers can be lattice matched to GaAs. It uses indium In and nitrogen N, and possibly antimony Sb, to get independent control of strain and bandgap, and thus refractive index, of dilute nitride InGaAsN(Sb) H-layers, with lower bandgap and higher refractive index than starting GaAs. Using expanded material system enables reliable DBR mirrors with higher reflectivity and spectral bandwidth and tunable VCSELs with wider tuning range.

An optoelectronic module comprising at least one semiconductor laser and a photonic chip is described herein. The semiconductor laser emits a primary electromagnetic radiation which is coupled into the photonic chip. The photonic chip comprises at least one first waveguide and at least one optical Bragg reflector having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip by means of at least one second waveguide, wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module and a Head-Mounted Display comprising an optoelectronic module are provided.

The present disclosure provides for laser integration into photonic platforms in which a first wafer, including a first substrate and a first insulator that includes a first plurality of dies that each include a first set of optical waveguides, is bonded to a second wafer, including a second substrate and a second insulator that includes a second plurality of dies that each include a second set of optical waveguides. The bond between the two wafers defines a wafer bond interface joining the first insulator with the second insulator and vertically aligning the first plurality of dies with the second plurality of dies such that respective first sets of optical waveguides are optically coupled with respective second sets of optical waveguides.

An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

A surface-emitting semiconductor laser includes a semiconductor laminated structure that includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer and in which light generated in the active layer is extracted as laser light from a side of the second-conductivity-type layer while resonating along a lamination direction of these layers, a current constriction layer in which the active layer and the second-conductivity-type layer are electrically connected together through an opening, an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer, and, in the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and a second portion that has a second thickness to make output of light emitted from the active layer smaller than the first portion in comparison with the first thickness and that surrounds the first portion.

The invention relates to an optoelectronic component including a semiconductor chip having a coupling-out facet that emits electromagnetic primary radiation during operation, a functional layer, wherein the coupling-out facet is at least partially covered by the functional layer, and the functional layer is a catalytic layer. The invention also relates to a method for producing an optoelectronic component.

A package structure is provided. The package structure includes a substrate, a frame structure, and a lens portion. The frame structure is disposed on the substrate. A sidewall of the frame structure has multiple lamination traces thereon. The lens portion covers the substrate. The frame structure has a through hole passing through the sidewall, and the through hole includes an edge, and a portion of the lamination traces overlaps the edge of the through hole.

An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.