A light-emitting device includes a light emission section (Em), a separation groove (152), and a high reflectance region (Hr). The light emission section (Em) includes a stack structure (100) including an active layer (100), a first reflector (110), and a second reflector (120). The active layer (130) performs light emission by current injection. The first reflector (110) and the second reflector (120) are stacked in a first direction with the active layer (130) interposed therebetween. The separation groove (152) is provided symmetrically around the light emission section (Em) on an emission surface of light from the stack structure (100) in the first direction. The separation groove (152) is dug in the stack structure (100) in the first direction. The high resistance region (Hr) is provided in the stack structure (100) on the outer side of an outermost shape of the separation groove (152) on the emission surface. The high resistance region (Hr) has electrical resistance higher than that of the light emission section (Em).

There are provided a surface emission laser 10, a surface emission laser array in which the surface emission laser 10 is arrayed two-dimensionally, and a surface emission laser manufacturing method that enable efficient injection of a current to an active layer 200b, while suppressing deterioration of the crystallinity of layers stacked above a contact area.

The present technology provides a surface emission laser 10 including a substrate 100, and a mesa structure 200 formed on the substrate 100, in which the mesa structure 200 includes at least a part of a first multilayer film reflector 200a stacked on the substrate 100, an active layer 200b stacked on the first multilayer film reflector 200a, and a second multilayer film reflector 200c stacked on the active layer 200b, and an impurity area 800 is provided over a contact area CA that is adjacent to the mesa structure 200, and contacts an electrode 600, and a side wall section of a portion of the mesa structure 200 which portion includes the first multilayer film reflector 200a.

A surface-emitting laser includes a substrate; semiconductor layers provided on the substrate, the semiconductor layers including a lower reflector layer, an active layer, and an upper reflector layer, the semiconductor layers forming a mesa; a first insulating film covering the mesa; and a second insulating film covering the first insulating film, wherein the mesa has a polygonal shape in a direction in which the substrate extends, and a vertex of the mesa in the direction in which the substrate extends has a chamfered portion.

A method for tuning the frequency of THz radiation is provided. The method utilizes an apparatus comprising a spin injector, a tunnel junction coupled to the spin injector, and a ferromagnetic material coupled to the tunnel junction. The ferromagnetic material comprises a Magnon Gain Medium (MGM). The method comprises the step of applying a bias voltage to shift a Fermi level of the spin injector with respect to the Fermi level of the ferromagnetic material to initiate generation of non-equilibrium magnons by injecting minority electrons into the Magnon Gain Medium. The method further comprises the step of tuning a frequency of the generated THz radiation by changing the value of the bias voltage.

An electrically pumped photonic-crystal surface-emitting laser, the epitaxy structure has a first mesa, the first mesa has multiple air holes and forming a photonic crystal structure, the epitaxy structure further has a second mesa, the second mesa and photonic crystal structure is facing the same direction; a first metal electrode arranged on the insulating layer, and covering the photonic crystal structure; a second metal electrode arranged on the second mesa and protruding out of the groove, making the first metal electrode and the second metal electrode face the same direction; and further make the first metal electrode connect to the first connecting metal and make the second metal electrode connect to the second connecting metal for making the photonic crystal structure become flip chip.

A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, a photonic crystal structure, a p-type cladding layer, an n-type semiconductor layer and a meta-surface structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The photonic crystal structure is disposed over the active layer. The p-type cladding layer is disposed over the photonic crystal structure. The n-type semiconductor layer is disposed over the p-type cladding layer. The meta-surface structure disposed on a surface of the n-type semiconductor layer away from the p-type cladding layer.

A computer adapted to convert images into raw data can provide the raw data to a control interface adapted to transmit the raw data with timing information to an electronic driver circuit. The electronic driver circuit can convert the raw data with the timing information provided by a control interface into regulated current signals provided to the semiconductor laser array at 300 dpi and higher. The semiconductor array can convert the current signals into light to illuminate an imaging member. The laser array can comprise vertical cavity surface emitting lasers providing imaging greater than 300 dpi. Each semiconductor laser can operate at 50 mW or greater.

A method of transferring a semiconductor epi layer onto a metal host substrate is described. An epi layer of a semiconductor chip (e.g., semiconductor laser array) including a substrate can be mounted onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer. The backside of the substrate can be treated to substantially remove the substrate, while leaving the epi layer undamaged (e.g., by polishing to where no more than 20 micrometers of the substrate remains). Metal can be formed on the treated backside resulting in a metalized backside. The planar handle wafer can then be removed from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains. The semiconductor chip can be annealed to form a backside ohmic contact interface. The semiconductor chip can then be attached to a mechanical block by the ohmic contact interface.

Exemplary embodiments of the present disclosure include chip-scale laser sources, such as semiconductor laser sources, that produce directional beams with low spatial coherence. The lasing modes are based on the axial orbit in a stable cavity and have good directionality. To reduce the spatial coherence of emission, the number of transverse lasing modes can be increased by fine-tuning the cavity geometry. Decoherence is reached in as little as several nanoseconds. Such rapid decoherence facilitates applications in ultrafast speckle-free full-field imaging.

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.