A nitride-based electronic device includes an oxide cladding layer, a nitride cladding layer, and a nitride active region layer arranged between the oxide cladding layer and the nitride cladding layer. First and second metal contacts are electrically coupled to the nitride active region layer. The nitride-based electronic device can be formed in a system in which a non-reactive chamber is arranged between an oxide reaction chamber and a nitride reaction chamber so that oxide and nitride layers can be grown without exposing the device to the environment between growth of the oxide and nitride layers.

A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D.sub.1 ≤ S.sub.1 and D.sub.1 ≤ S.sub.2.

Provided is a vertical-cavity surface-emitting semiconductor laser diode, including a substrate and an epitaxial stack structure disposed on the substrate. The epitaxial stack structure includes an active region, a current confinement layer and a mode filter layer. The mode filter layer includes an optical aperture, and the mode filter layer is able to be oxidized. Accordingly, the optical aperture of the mode filter layer is formed by oxidizing the mode filter layer.

In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

The invention relates to a method for producing a semiconductor assembly, in particular connecting a semiconductor chip to a heat sink. A first metal layer consisting of Pb, Cd, In or Sn is made so thin that it is bonded by means of an opposing second metal layer consisting of another metal, for example gold, in a layer consisting of intermetallic phases. This can prevent migration of the soft metals. The brittle intermetallic layer is prevented from fracturing by a continuous pressing force.

A surface-emitting semiconductor laser includes a substrate, a first electrode provided in contact with the substrate, a first light reflection layer provided over the substrate, a second light reflection layer provided over the substrate, an active layer provided between the second light reflection layer and the first light reflection layer, a current confining layer that is provided between the active layer and the second light reflection layer and includes a current injection region, a second electrode provided over the substrate, with the second light reflection layer being interposed between the second electrode and the substrate, and a contact layer that is provided between the second electrode and the second light reflection layer and includes a contact region that is in contact with the second electrode, in which the contact region has a smaller area than an area of the current injection region.

A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include an active layer having a quantum cascade structure and to have a first end surface and a second end surface facing each other in a light waveguide direction; a first electrode; a second electrode; an insulating film continuously formed from the second end surface to a region on a second end surface side of at least one surface of a surface on an opposite side of the first electrode from the semiconductor laminate and a surface on an opposite side of the second electrode from the semiconductor substrate; and a metal film formed on the insulating film to cover at least the active layer when viewed in the light waveguide direction. An outer edge of the metal film does not reach the one surface when viewed in the light waveguide direction.

A method for manufacturing a quantum cascade laser element includes: a step of forming a semiconductor layer on a first major surface of a semiconductor wafer; a step of removing a part of the semiconductor layer by etching such that each of portions of the semiconductor layer includes a ridge portion; a step of forming an insulating layer such that at least a part of a surface of the ridge portion is exposed; a step of embedding the ridge portion in each of metal plating layers; a step of flattening a surface of the metal plating layers by polishing in a state where a protective member is disposed; a step of forming an electrode layer on a second major surface of the semiconductor wafer; and a step of cleaving the semiconductor wafer and the semiconductor layer in a state where the protective member is removed.

A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion on a side of a semiconductor substrate along a width direction of the semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the second portion on a side opposite to the semiconductor substrate is located between a surface of an active layer on a side opposite to the semiconductor substrate and a surface of the active layer on a side of the semiconductor substrate. When viewed in the width direction of the semiconductor substrate, a part of the metal layer on the first portion overlaps the active layer. The metal layer is directly formed on the first portion.

A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate having a first end surface and a second end surface; a first electrode; a second electrode; and an anti-reflection film formed on the first end surface. The semiconductor laminate is configured to oscillate laser light having a center wavelength of 7.5 μm or more. The anti-reflection film includes an insulating film being a CeO.sub.2 film formed on the first end surface, a first refractive index film being a YF.sub.3 film or a CeF.sub.3 film disposed on a side opposite the first end surface with respect to the insulating film, and a second refractive index film formed on the first refractive index film on a side opposite the first end surface with respect to the first refractive index film and having a refractive index of larger than 1.8.