A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

An optical member includes: a main body having transparency or heat dissipation properties; an optical film disposed on an upper face of the main body; a metal film disposed on the upper face of the main body in a region other than a region where the optical film is disposed; a surrounding part joined via the metal film; and a wavelength conversion part surrounded by the surrounding part. The wavelength conversion part is positioned inward of a periphery of the optical film in a top view. The wavelength conversion part is not directly bonded to the optical film and the main body.

The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

A light emission device includes a light source that emits an excitation light beam, a light deflector, a wavelength converter that receives and converts the excitation light beam deflected by the light deflector to wavelength-converted light, and a light concentration section that focuses the excitation light beam on the wavelength converter. The light concentration section includes a first optical system disposed between the light source and the light deflector, and a second optical system disposed between the light deflector and the wavelength converter. In the second optical system, a focal length of an Ay-axis is shorter than a focal length of an Ax-axis, where the Ax-axis is defined as an axis that has a lowest beam parameter product of the excitation light beam, and the Ay-axis is defined as an axis orthogonal to the Ax-axis in a cross section perpendicular to a propagation direction of the excitation light beam.

A method for increasing the bandwidth of an electroabsorption modulator (EAM) includes the following steps. First, a plurality of p-i-n active waveguides for the EAM are defined on a p-i-n optical waveguide forming an EAM having a shorter p-i-n active waveguide length. Then, the bandwidth of the EAM can be increased. Second, the high-impedance transmission lines are used in series to connect the EAM sections to reduce the microwave reflection and then increase the device bandwidth. Finally, the impedance-controlled transmission lines for the signal input and output can not only reduce the parasitic effects resulting from packaging, but also reduce the microwave reflection resulting from the impedance mismatch at the device input and load.

A light emitting device includes a plurality of semiconductor laser elements, a light-transmissive member, and a wavelength conversion member. Each of the semiconductor laser elements is configured to emit light having a first wavelength. The light-transmissive member includes a plurality of first inclined surfaces and a lower surface. The light-transmissive member is positioned with respect to the semiconductor laser elements so that beams of the light emitted from the semiconductor laser elements enter the light-transmissive member respectively through the first inclined surfaces and exit from the lower surface. The wavelength conversion member is disposed in contact with the lower surface of the light-transmissive member and configured to convert at least a portion of the light exiting from the lower surface to wavelength-converted light having a second wavelength.

Low-cost and high-efficiency monolithically integrated nanoscale-based light emitter techniques can be used in, for example, electronic display applications and spectroscopy applications using spectrometers. Using various techniques, a light emitter can include quantum dots (QDs) and can be arranged to emit light in mono-band (e.g., one wavelength) or in broad-band (e.g., more than one wavelength) such as in the visible to mid-infrared range, e.g., from about 365 nm to about 10 μm. The light emitter nanotechnology can be based on a nanoscale wafer manufacturing for displays and spectroscopy applications.

A wavelength converting element according to the present disclosure includes: a wavelength converting body including an incident surface and an exit surface and configured to perform wavelength conversion on a primary light in a first wavelength band, entered from the incident surface, thereby generating a secondary light in a second wavelength band, which differs from the first wavelength band, the wavelength converting body emitting the secondary light from the exit surface; a metallic antenna group provided in a close vicinity of the wavelength converting body and including a plurality of metallic antennas disposed so as to be spaced apart from each other at a distance of substantially an optical wavelength of the secondary light in the wavelength converting body; and a dielectric antenna group including a plurality of dielectric antennas and provided so as to face the exit surface of the wavelength converting body.

The present invention relates to novel phosphor mixtures and to a light-emitting device which comprises at least one of the novel phosphor mixtures. The phosphor mixtures can be used in phosphor-converted LEDs with a semiconductor that emits in the violet spectral region. The present invention furthermore relates to a lighting system which may comprise the light-emitting devices according to the invention, and to a dynamic lighting system. The present invention furthermore relates to a process for the preparation of the phosphor mixtures according to the invention and to the use thereof in light-emitting devices for use in general lighting and/or in specialty lighting.