A lamp unit includes: a laser light source having a CAN type package; a pedestal having a back surface in contact with a heat sink and a front surface on which the laser light source is mounted; and a pressing member that abuts onto an abutting portion of the laser light source and presses the laser light source in a direction toward the pedestal. The pressing member and the pedestal are fixed to the heat sink by fastening with a common fixing member.

A light emitting device includes a plurality of semiconductor laser elements, a light-transmissive member, and a wavelength conversion member. Each of the semiconductor laser elements is configured to emit light having a first wavelength. The light-transmissive member includes a plurality of first inclined surfaces and a lower surface. The light-transmissive member is positioned with respect to the semiconductor laser elements so that beams of the light emitted from the semiconductor laser elements enter the light-transmissive member respectively through the first inclined surfaces and exit from the lower surface. The wavelength conversion member is disposed in contact with the lower surface of the light-transmissive member and configured to convert at least a portion of the light exiting from the lower surface to wavelength-converted light having a second wavelength.

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

A method of an optical member comprises: providing a light transmissive member or a heat dissipating member in which a metal film and an optical film having a larger thickness than a thickness of the metal film are formed in separate regions of an upper face of a main body of the light transmissive member or an upper face of a main body of the heat dissipating member, providing a wavelength conversion member in which a metal film is formed on a lower face of a main body of the wavelength conversion member, and bonding the metal film of the light transmissive member or the metal film of the heat dissipating member to the metal film of the wavelength conversion member via a metal adhesive while positioning the optical film directly under a wavelength conversion part of the wavelength conversion member.

A vertical cavity surface emitting laser (VCSEL) has first and second electrical contacts, and an optical resonator. The optical resonator has first and second distributed Bragg reflectors (DBRs), an active layer, a distributed heterojunction bipolar phototransistor (DHBP), and an optical guide. The DHBP has a collector layer, light sensitive layer; a base layer; and an emitter layer. There is an optical coupling between the active layer and the DHBP for providing an active carrier confinement by the DHBP. The optical guide guides an optical mode within the optical resonator during operation. The optical guide is outside a current flow which can be provided by the first and second electrical contacts during operation of the VCSEL. The optical guide is outside a layer sequence between the first and second electrical contacts in the vertical direction of the VCSEL. The optical guide has an oxide aperture arranged in the second DBR.

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15.

A wavelength conversion element includes a wavelength conversion layer having a first surface on which excitation light is incident, a second surface located on the side opposite the first surface, a plurality of phosphor particles that convert the excitation light in terms of wavelength to produce fluorescence, and a binder that holds the plurality of phosphor particles. The plurality of phosphor particles have a particle diameter distribution, and the minimum particle diameter in the particle diameter distribution of a plurality of the phosphor particles contained in a first region located on the side facing the first surface is greater than the minimum particle diameter in the particle diameter distribution of a plurality of the phosphor particles contained in a second region located on the side facing the second surface.

The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

A wavelength converter 100 includes: a first phosphor 1 composed of an inorganic phosphor activated by Ce.sup.3+; and a second phosphor 2 composed of an inorganic phosphor activated by Ce.sup.3+ and different from the first phosphor. At least one of the first phosphor and the second phosphor is particulate. The first phosphor and the second phosphor are bonded to each other by at least one of a chemical reaction in a contact portion between the compound that constitutes the first phosphor and a compound that constitutes the second phosphor and of adhesion between the compound that constitutes the first phosphor and the compound that constitutes the second phosphor.

Provided is a wavelength conversion member that can be adjusted in chromaticity with high accuracy and a production method therefor. A wavelength conversion member 1 having a first principal surface 1a and a second principal surface 1b opposed to each other includes a glass matrix 2 and phosphor particles 3 disposed in the glass matrix 2, wherein concentrations of the phosphor particles 3 in the first principal surface 1a and in the second principal surface 1b are lower than concentrations of the phosphor particles 3 in surface layer bottom planes 1c and 1d located 20 m inward from the first principal surface 1a and 20 m inward from the second principal surface 1b, respectively.