An external cavity diode laser has been developed to achieve a linear frequency chirp over a broad bandwidth using a silicon photonic filter chip as the external cavity. By appropriately chirping the cavity phase using the gain chip and/or a cavity phase modulator on the silicon photonic chip along with simultaneously varying the filter resonance, approximately linear frequency chirping can be accomplished for at least 50 GHz, although desirable structures with useful lesser chirp bandwidths are also described. With careful control of the chip design, it is possible to achieve predictable behavior of mode jumps along with large scannable ranges within a mode, which allows for stitching together segments of linear chirp through a mode jump to provide for very large chirp bandwidths greater than 1 THz.

Various technologies described herein pertain to injection locking on-chip laser(s) and external on-chip resonator(s). A system includes a first integrated circuit chip and a second integrated circuit chip. The first integrated circuit chip and the second integrated circuit chip are separate integrated circuit chips and can be optically coupled to each other. The first integrated circuit chip includes a laser configured to emit light via a first path and a second path. The second integrated circuit chip includes a resonator formed of an electrooptic material. The resonator can receive the light emitted by the laser of the first integrated circuit chip via the first path and return feedback light to the laser of the first integrated circuit chip via the first path. The feedback light can cause injection locking of the laser to the resonator to control the light emitted by the laser (e.g., via the first and second paths).

The present invention concerns a tunable Dense Wavelength Division Multiplex (DWDM) intra cavity laser device having a first optical wave guide having a first optical grating section, a second optical wave guide having a second optical grating section, an active gain section spatially separated from the second optical grating section and a phase section, and a DWDM-filter having an intra-cavity ring resonator located between the first optical wave guide and the second optical wave guide for coupling optical waves between the first and second optical wave guides. The tunable laser device is tunable in a discrete manner depending on a length of the ring resonator that is selected such that the free spectral range of the ring resonator matches a predetermined fixed wavelength spacing grid.

The present invention relates to evanescently coupling whispering gallery mode optical resonators having a liquid coupling as well as methods of making and using same. The aforementioned evanescently coupling whispering gallery mode optical resonators having a liquid couplings provide increased tunability and sensing selectivity over current same. The aforementioned. Applicants' method of making evanescent-wave coupled optical resonators can be achieved while having coupling gap dimensions that can be fabricated using standard photolithography. Thus economic, rapid, and mass production of coupled WGM resonators-based lasers, sensors, and signal processors for a broad range of applications can be realized.

In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.

Provided is a variable wavelength laser device that achieves phase control of high precision while restraining thermal interference and stably outputs emission light of desired wavelength.

The variable wavelength laser device of the present invention includes: an optical amplification means including a low-reflective surface that reflects light of wavelengths other than a predetermined wavelength and emits light of the predetermined wavelength; a wavelength control means for controlling wavelength of light being transmitted through the optical waveguide; a phase control means for controlling phase of light being transmitted through the optical waveguide using heat emitted by a heating means; a reflection means for totally reflecting the inputted light; and a heat dissipation means for restraining transfer of heat emitted by the heating means to regions other than a region in which the phase control means is disposed.

An integrated optoelectronic device includes a substrate which supports a passive waveguide for index-confining, in two transverse directions, and guiding, along a longitudinal direction, at least one optical mode. The devices further include a first charge transport layer for transporting charge carriers of a first conductivity type, a second charge transport layer for transporting charge carriers of a second conductivity type, opposite to the first conductivity type, and an active layer comprising a particulate film of solution-processable semiconductor nanocrystals. The active layer is arranged relative to the charge transport layers to form a diode junction. The active layer and the first and the second charge transport layer are further formed on the substrate such that they each overlap at least a portion of the waveguide in a cross-section perpendicular to the longitudinal direction. The active layer is evanescently coupled to the waveguide.

The invention relates to a tunable laser source, and the reduction in the loss and the size can both be achieved in a tunable laser source having a power monitor and a wavelength locker function. A tunable laser is formed of a semiconductor optical amplifier and a resonator, and one of the two output light beams split from part of the light within the tunable laser by a 2×2 type optical splitter is incident into a light intensity monitor, and the other is incident into a wavelength locker.

A tunable laser includes a semiconductor optical amplifier, a waveguide wavelength-tunable filter that forms the tunable laser with the semiconductor optical amplifier, an optical splitting mechanism set on a coupling optical waveguide that couples the wavelength-tunable filter and the semiconductor optical amplifier, a first optical splitter of a waveguide type that splits at least part of a light beam split by the optical splitting mechanism into two light beams, a first optical waveguide coupled to one output end of the first optical splitter, a second optical waveguide that is coupled to another output end of the first optical splitter and includes a delay waveguide, a 90° hybrid waveguide that includes two input ports to which an output light beam from the first optical waveguide and an output light beam from the second optical waveguide are input and four output ports that output four output light beams.

A method for aligning chip regions.