A light emitting element (10A) of the present disclosure includes: a stacked structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are stacked; a first light reflecting layer (41) formed on a first surface side of the first compound semiconductor layer (21) and having a convex shape in a direction away from the active layer (23); and a second light reflecting layer (42) formed on a second surface side of the second compound semiconductor layer (22) and having a flat shape, in which a partition wall (24) extending in a stacking direction of the stacked structure (20) is formed so as to surround the first light reflecting layer (41).

A light source includes a substrate with a first surface and an opposite second surface. An epitaxial layer is positioned on the first surface of the substrate. The light source also includes at least one light generator in the epitaxial layer positioned such that an optical signal transmitted thereby is directed toward the substrate. A diffuser is positioned on the second surface of the substrate, and at least one monitor photodetector is positioned in the epitaxial layer in an arrangement configured to receive a portion of the optical signal which is reflected by the diffuser. In one form, the light generator may include a vertical cavity surface emitting laser (VCSEL).

In one example, a laser assembly may include a substrate, a lens array, and a laser array. The lens array may be positioned on a first side of the substrate. The laser array may be positioned on a second side of the substrate opposite the first side. Lasers of the laser array may be oriented to generate optical signals through the substrate to corresponding lenses of the lens array. The lens array may include at least one concave lens and at least one convex lens. The concave and convex lenses may map the irradiance of the lasers to a common target irradiance profile, resulting in an alignment tolerant laser assembly.

An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.

Disclosed herein are various embodiments for high performance wireless data transfers. In an example embodiment, laser chips are used to support the data transfers using laser signals that encode the data to be transferred. The laser chip can be configured to (1) receive a digital signal and (2) responsive to the received digital signal, generate and emit a variable laser signal, wherein the laser chip comprises a laser-emitting epitaxial structure, wherein the laser-emitting epitaxial structure comprises a plurality of laser-emitting regions within a single mesa structure that generate the variable laser signal. Also disclosed are a number of embodiments for a photonics receiver that can receive and digitize the laser signals produced by the laser chips. Such technology can be used to wireless transfer large data sets such as lidar point clouds at high data rates.

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure.

Provided is a surface emitting laser device including a plurality of surface emitting laser elements and capable of significantly reducing the crosstalk of light and the formation of a dark line. The surface emitting laser device includes: a mounting substrate; a surface emitting laser array including a plurality of surface emitting laser elements arranged side by side on the mounting substrate; a plurality of light absorption layers formed on the plurality of surface emitting laser elements, respectively, and each including an opening; and a plurality of wavelength conversion plates formed on the plurality of light absorption layers, respectively, and each including a fluorescent plate and a light reflection film covering a side surface of the fluorescent plate.

A flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package has a VCSEL pillar array. A first metal contact is formed over a top section of each pillar of the VCSEL pillar array. A second metal contact is formed on a back surface of the VCEL pillar array. An opening is formed in the second metal contact and aligned with the pillars of the VCSEL pillar array. Solder tip is applied on each pillar of the VCSEL pillar array to flip chip mount the VCSEL pillar array.

This disclosure relates generally to an electronic package that can include a die and a dielectric layer at least partially enveloping the die. Electrical interconnects can be electrically coupled to the die and passing, at least in part, through the dielectric layer. An optical emitter can be electrically coupled to the die with a first one of the electrical interconnects and configured to emit light from a first major surface of the electronic package. A solder bump can be electrically coupled to the die with a second one of the electrical interconnects and positioned on a second major surface of the electronic package different from the first major surface.

Example implementations relate to mounting optoelectronic devices and wavelength-division multiplexing optical connectors. For example, an implementation includes a transparent interposer having an integrated plurality of lenses. A plurality of optoelectronic devices are mounted to a bottom surface of the transparent interposer, each of the optoelectronic devices being paired to a respective lens of the plurality of lenses. The bottom surface of the transparent interposer is mounted to a substrate within a region of an optical socket. The optical socket receives a filter-based wavelength-division multiplexing (WDM) optical connector. Each lens of the plurality of lenses is paired to a respective filter of the WDM optical connector when the WDM optical connector is mated to the optical socket.