An array of surface-emitting lasers is provided. The array outputs high brightness in a unipolar way. The array comprises a stress-adjustment unit and a plurality of epitaxial device units. The stress-adjustment unit is used to adjust stress. The stress from a substrate is used to select a laser mode for an aperture unit. The selection of the laser mode is enhanced for the aperture unit without sacrificing driving current. Low current operation is achieved in a single mode for effectively reducing volume and further minimizing the size of the whole array to achieve high-quality laser output. An object can be scanned by the outputted laser to obtain a clear image with a high resolution. Hence, the present invention is applicable for face recognition with high recognition and high security.

A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to be modified from a nominal wavelength of the VCSEL.

A light emitting element includes an active layer; and a first reflecting mirror over the active layer. The first reflecting mirror includes a multilayer-film reflecting mirror and a first layer on a first surface. The multilayer-film reflecting mirror has the first surface and a second surface closer to the active layer than the first surface, and includes a first refractive-index layer having a first refractive index; and a second refractive-index layer having a second refractive index higher than the first refractive index. The first refractive-index layer and the second refractive-index layer are alternately stacked. The first surface has an emission region from which the light generated in the active layer is emitted. The first layer is in the emission region of the first surface and is configured to absorb a portion of the light emitted from the first surface and transmit another portion of the light through the first layer.

There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed.

The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface that is anisotropic, wherein the ROC comprises four directions, the four directions being +x, +y, −x, −y, the ROC in at least one direction is in a range greater than a cavity length of the VCSEL and less than a predefined ROC value for a standard beam width (ROCUL), and the ROC in at least one of the other directions is outside the range.

Disclosed are a depth data measuring device and a structured light projection unit included therein. The device comprises: a projection unit, configured to project structured light to the subject; an imaging unit, configured to photograph the subject to obtain a two-dimensional image frame illuminated by the structured light, wherein, the projection unit comprises: a laser generator configured to generate laser light; an LCOS (Liquid Crystal on Silicon) element configured to receive the laser light and generate the structured light for projection. The present disclosure uses LCOS for fine projection of structured light in order to improve imaging accuracy of depth data. LCOS can also transform various projection codes including speckles or stripes, so that it is suitable for various imaging scenarios. Furthermore, the VCSEL structure can be combined to achieve low power consumption and miniaturization of the projection unit, and multiple groups of coaxial photosensitive units can be introduced to reduce the imaging time required for multi-frame merging to calculate depth data and thereby increase the frame rate.

An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

In some implementations, an emitter device includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include a first mirror, a second mirror, and an active layer between the first mirror and the second mirror. The epitaxial layers may include at least one oxidation layer including a first oxidized region and a second oxidized region separate from the first oxidized region. The first oxidized region and the second oxidized region may be configured to provide a strain on the epitaxial layers that is radially asymmetric. The epitaxial layers may include a set of oxidation trenches in the set of epitaxial layers to expose the at least one oxidation layer.

A visible light source includes a substrate, a first reflector and a second reflector configured to reflect infrared light and arranged vertically to form a vertical cavity on the substrate, an active region in the vertical cavity and configured to emit infrared light, a micro-resonator on the substrate and configured to receive the infrared light emitted by the active region and generate visible light through optical parametric oscillation, and an output coupler configured to couple the visible light generated in the micro-resonator out of the micro-resonator.