A criterion method of GCCS (Globally Complete Chaos Synchronization) for three-node VCSEL (Vertical Cavity Surface Emitting Laser) networks with delay coupling is provided, including steps of: providing a delay-coupled VCSEL network consisting of three identical units and dynamic equations of the VCSEL network; providing assumptions of an outer-coupling matrix and a unitary matrix under the dynamic equations of the VCSEL network; in the three-node VCSEL network, determining rate equations of i-VCSEL, determining dynamic equations of a synchronization manifold, and determining a master-stability equation; calculating three maximum Lyapunov exponents; determining a stability of a synchronization state of the three-node VCSEL network, and determining whether the synchronization manifold of the VCSEL network is a chaotic waveform. Through a master-stability function, the method for determining whether the GCCS is achieved among all node lasers is provided, which solves a difficult problem of GCCS criterion for the VCSEL networks.

A semiconductor laser including: a first mirror layer; a second mirror layer; an active layer, a current confinement layer, a first region, and a second region, in which the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body, the first region and the second region constitute an oxidized region of the laminated body, in a plan view, the laminated body includes a first part, a second part, and a third part disposed between the first part and the second part and resonating light generated in the active layer, and in a plan view, at least at a part of the third part, W1>W3 and W2>W3, W1 is a width of the oxidized region of the first part, W2 is a width of the oxidized region of the second part, and W.sub.3 is a width of the oxidized region of the third part.

Techniques for reducing the risk for an unsafe eye condition associated with light sources. In an example, a light source package is described. The light source package includes a package body defining an interior volume and including an opening. The package also includes a light source contained inside the interior volume of the package body. The package also includes an optical element that occupies at least a portion of the opening of the package body. An electrically conductive material is disposed over a surface of the optical element. This material may be electrically coupled with a system. The system accesses an electrical parameter of the material, determines a damage associated with the optical element based on the electrical parameter, and initiates a corrective action associated with the light source based on the damage.

Vertical cavity surface-emitting lasers (VCSELs) includes a vertical cavity surface-emitting laser including a gain layer configured to generate light, a distributed Bragg reflector disposed on a first surface of the gain layer, and a nanostructure reflector disposed on a second surface of the gain layer opposite from the first surface, the nanostructure reflector including a plurality of nanostructures having a sub-wavelength dimension, wherein the plurality of nanostructures include a plurality of anisotropic nanoelements and are configured to emit a circularly polarized laser light through the nanostructure reflector based on distributions and arrangement directions of the plurality of anisotropic nanoelementss.

An array of surface-emitting lasers is provided. The array outputs high brightness in a unipolar way. The array comprises a stress-adjustment unit and a plurality of epitaxial device units. The stress-adjustment unit is used to adjust stress. The stress from a substrate is used to select a laser mode for an aperture unit. The selection of the laser mode is enhanced for the aperture unit without sacrificing driving current. Low current operation is achieved in a single mode for effectively reducing volume and further minimizing the size of the whole array to achieve high-quality laser output. An object can be scanned by the outputted laser to obtain a clear image with a high resolution. Hence, the present invention is applicable for face recognition with high recognition and high security.

Quantum well designs for tunable VCSELs are disclosed that are tolerant of the wavelength shift. Specifically, the active region has even number of substantially uniformly spaced (¼ of the center wavelength in the semiconducting material) quantum wells.

An illuminator includes a semiconductor emitter chip, e.g. a VCSEL chip, configured for emitting a light beam. A polarization-selective element is optically coupled to the semiconductor emitter chip for defining a polarization state of the emitted light beam. A beam redirecting optic is coupled to the polarization-selective element for receiving and at least one of collimating or redirecting the emitted light beam. The polarization-selective element, e.g. a polarization-selective optical feedback element for VCSEL, defines a polarization state of the emitted light beam, thereby stabilizing output optical power of light beam propagated through the beam redirecting optic. A light beam of a constant optical power and a well-defined polarization state may be used as an illumination source for an eye-tracking system.

An electrically injected vertical-cavity surface emitting laser (VCSEL) and a method of manufacturing the same is disclosed. The electrically injected VCSEL includes a non-c-plane substrate and a nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate.

A semiconductor laser includes a first mirror layer, a second mirror layer, an active layer, a first area provided continuously with the first mirror layer and including a plurality of first oxidized layers, and a second area provided continuously with the second mirror layer and including a plurality of second oxidized layers. The first mirror layer, the second mirror layer, the active layer, the first area, and the second area form a laminate. The laminate includes in the plan view a first section, a second section, and a third section disposed between the first section and the second section along a first axis and causing light produced in the active layer to resonate. The amount of strain per unit volume in the second mirror layer of the third section is measured along a second axis perpendicular to the first axis and passing through the center of the third section in the plan view, and the difference between the maximum of the amount of strain and the minimum thereof is smaller than 0.20%.

A vertical cavity surface emitting laser includes a gain layer configured to generate light; a distributed Bragg reflector below the gains layer; and a meta structure reflector above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension.