Provided is a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.

The present technology provides a surface emitting laser including: a first multilayer film reflector; a second multilayer film reflector; and an active layer disposed between the first multilayer film reflector and the second multilayer film reflector, in which in the first multilayer film reflector and/or the second multilayer film reflector, a high-concentration impurity region having a higher impurity concentration than other regions is partially provided in a thickness direction. According to the present technology, there is provided a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.

A vertical cavity surface emitting laser includes an active area, an inner trench, an outer trench, and a first implantation region. The active area includes a first mirror, an active region, a second mirror, and an etch stop layer. The first mirror is formed over a substrate. The active region is formed over the first mirror. The second mirror is formed over the active region. The etch stop layer with an aperture is formed between the active region and the second mirror. The inner trench surrounds the active area in a top view. The outer trench if formed beside the inner trench. The first implantation region is formed below the inner trench.

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.

A vertical-cavity surface-emitting laser (VCSEL) may include a substrate and a set of epitaxial layers on the substrate. The set of epitaxial layers may include a first mirror and a second mirror, an active region between the first mirror and the second mirror, and an oxidation layer to provide optical and electrical confinement in the VCSEL. The oxidation layer may be near the first mirror. The set of epitaxial layers may include an oxide lens to control a characteristic of an output beam emitted by the VCSEL. The oxide lens may be separate from the oxidation layer, and may be a lens that is separate from the first mirror and from the second mirror.

Vertical Cavity Surface Emitting Laser (VCSEL) configurations are disclosed. In a first example, the VCSEL includes a III-Nitride active region between a p-type III-Nitride layer and an n-type III-Nitride layer; and a curved minor on or above the p-type III-Nitride layer. The curved mirror can be formed in a III-Nitride layer or a Transparent Oxide (TO) material and enables the formation of a long VCSEL cavity that improves VCSEL lifetime, VCSEL output power, VCSEL power efficiency and VCSEL reliability. In a second example, the VCSEL has an active region with a high indium content. In a third example, the VCSEL is transparent.

A semiconductor device comprising: a layered structure 20 configured by layering a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a substrate 11; a first light reflecting layer 41 arranged on the first surface side of the first compound semiconductor layer 21; and a second light reflecting layer 42 arranged on the second surface side of the second compound semiconductor layer 22, wherein the second light reflecting layer 42 has a flat shape; a concave surface portion 12 is formed on a substrate surface 11b; the first light reflecting layer 41 is formed on at least the concave surface portion 12; the first compound semiconductor layer 21 is formed to extend from the substrate surface 11b onto the concave surface portion 12; and a cavity is present between the first light reflecting layer 41 formed on the concave surface portion 12 and the first compound semiconductor layer 21.

A surface emission laser driving method according to an embodiment of the present technology includes the following two steps. (A) Generating drive pulses to be sequentially outputted to, out of a plurality of surface emission lasers disposed on a same substrate, each of the surface emission lasers selected as light-emission targets, on the basis of the number of surface emission lasers selected as the light-emission targets and a monitoring temperature that is immediately prior to light emission of each of the surface emission lasers selected as the light-emission targets. (B) Outputting the generated drive pulses to each of the surface emission lasers selected as the light-emission targets.

A method of forming a vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence includes forming a first mirror over a substrate; forming an active region (e.g., a dilute nitride active region) over the first mirror; forming an oxidation aperture (OA) layer over the active region; forming a spacer on a surface of the OA layer; and forming a second mirror over the spacer. The active region is formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence and the second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence.

Systems and methods disclosed herein include a vertical cavity surface emitting laser (VCSEL) device that includes an anode, a cathode, and one or more curved apertures located in an epitaxial layer between the anode and the cathode, each of the one or more curved apertures having an aperture edge and one or more oxidation bridges crossing the curved aperture that allow current to flow inside the curved aperture, in which when a current signal is applied to the VCSEL, current flow between the anode and the cathode is distributed along the aperture edge of the one or more curved apertures.

A vertical cavity surface emitting laser (VCSEL) array is fabricated to produce multiple wavelengths. A first distributed Bragg reflector (DBR) is formed on a substrate, and an optical layer having an active region is formed on the first DBR. The optical layer has a variation in optical characteristic configured to generate multiple wavelengths. To do this, a first portion of the layer is formed on the first DBR. Different dimensioned features (profiles, wells, trenches, gratings, etc.) are then formed on a surface of the first portion. Subsequently, a second portion of the layer is formed by filling in the dimensioned features on the first portion's surface. Finally, a second DBR is formed on the second portion of the layer. The variation in optical characteristic can include variation in refractive index, physical thickness, or both. The assembly can be processed as usual to produce a VCSEL array having multiple emitters.