The invention describes a Vertical Cavity Surface Emitting Laser and a method of manufacturing such a Vertical Cavity Surface Emitting Laser. The Vertical Cavity Surface Emitting Laser comprising a first electrical contact (105, 405, 505, 605, 705), a substrate (110, 410, 610, 710), a first distributed Bragg reflector (115, 415, 615, 715), an active layer (120, 420, 620, 720), a distributed heterojunction bipolar phototransistor (125, 425, 625, 725), a second distributed Bragg reflector (130, 430, 630, 730) and a second electrical contact (135, 435, 535, 635, 735), the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) comprising a collector layer (125a), a light sensitive layer (125c), a base layer (125e) and an emitter layer (125f), wherein the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) is arranged such that there is an optical coupling between the active layer (120, 420, 620, 720) and the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) such that an optical mode of the Vertical Cavity Surface Emitting Laser is self-positioning in accordance with the active carrier confinement during operation of the Vertical Cavity Surface Emitting Laser. It is the intention of the present invention to provide a VCSEL which can be easily and reliably processed by integrating the distributed heterojunction bipolar phototransistor (125, 425, 625, 725).

A device includes an illumination device for emitting an illumination beam. The illumination device includes an emitter array including multiple light emitters; and a micro-lens array (MLA) including multiple micro-lenses. The MLA is positioned to receive light emitted from the emitter array. Light from the MLA forms the illumination beam. A first region of the MLA is offset from the emitter array by a first offset amount, and a second region of the MLA is offset from the emitter array by a second offset amount different than the first offset amount.

A very strong selection mechanism is provided in a tunable vertical cavity surface emitting laser (VCSEL) by manipulating the laser threshold to be different for TE and TM polarization by a employing a subwavelength grating in the laser cavity. The laser selects the polarization with the lowest threshold. The grating does not diffract and does not add loss to the cavity. It works by creating a large birefringence layer between the semiconductor and air sub-cavities of the full VCSEL. Multilayer stack calculations show that this results in a lower threshold for the TM polarization over the TE. This subwavelength grating layer, in one embodiment, replaces the AR coating on the semiconductor surface.

According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer.

A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

Nanolaser arrays have certain advantages over LEDs and conventional laser diodes for solid-state lighting applications. In particular, nanocavities can channel spontaneous emission entirely into the lasing mode, so that all the emissions (spontaneous and stimulated) contribute to usable light output over a large range of current.

An infrared-laser source device provided with an external housing, said external housing comprising: a light output interface arranged in a front part of the external housing, at least one infrared-laser source arranged in a rear part of the external housing and configured to emit an IR-laser beam providing a first emitting area at the light output interface, and a first light distributing element configured to diverge light at the light output interface, wherein said infrared-laser source device further comprises a second light distributing element separated from the first light distributing element and providing, at the light output interface, a second emitting area larger than the first emitting area.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror on the substrate, a first semiconductor layer on the first multilayer film reflecting mirror, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer. The second semiconductor layer includes a low resistance region and a high resistance region on an upper surface. The high resistance region is depressed from the low resistance region toward the light-emitting layer outside the low resistance region and impurities of the second conductivity type are inactivated in the high resistance region such that the high resistance region has an electrical resistance higher than an electrical resistance of the low resistance region. A light-transmitting electrode layer is in contact with the low resistance region and the high resistance region, and a second multilayer film reflecting mirror is on the light-transmitting electrode layer.

A vertical-cavity surface-emitting laser includes a substrate. A first mirror is disposed on the substrate. An active layer is disposed on the first mirror. An oxide layer is disposed on the active layer. An aperture is disposed on the active layer. The aperture is surrounded by the oxide layer. A second mirror is disposed on the aperture and the oxide layer. A high-contrast grating is disposed on the second mirror. The high-contrast grating includes a first grating element and a second grating element, and the first grating element and the second grating element are spaced apart from each other with an air gap therebetween. A passivation layer is disposed on the high-contrast grating. A first thickness of the passivation layer on a top surface of the first grating element is greater than a second thickness of the passivation layer on a first sidewall of the first grating element.