Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer while leaving a central region of the optically active layer un-oxidized. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.

A semiconductor laser apparatus includes a semiconductor optical integrated device including a semiconductor laser array including a plurality of semiconductor laser elements, a semiconductor arrayed waveguide grating, made of a semiconductor, including an inputting slab waveguide connected to the plurality of the semiconductor laser elements, an array waveguide connected to the inputting slab waveguide and including a plurality of waveguides having different lengths from each other and arranged in a parallel manner, and an outputting slab waveguide connected to the array waveguide; a substrate on which the semiconductor laser array and the semiconductor arrayed waveguide grating are monolithically integrated; and an output facet outputting a laser light emitted from the semiconductor laser elements and including an output end of the outputting slab waveguide.

An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding to layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.

A laser device is provided. The laser device includes a stack of epitaxial layers, a first conductive layer, an intermediate layer, and a first electrode. The stack of epitaxial layers has a central region and an edge region. The stack of epitaxial layers includes a first reflective structure, an active region disposed on the first reflective structure, a second reflective structure disposed on the active region. The first conductive layer disposes on the stack of epitaxial layers and covers the central region and at least a part of the edge region. The intermediate layer has a first opening that corresponding to the central region of the stack of epitaxial layers, wherein the intermediate layer comprises insulating material or metal. The first electrode disposes on the first conductive layer.

An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.

Embodiments are notably directed to a vertical microcavity. The vertical microcavity includes a first reflector and a second reflector, each of which includes one or more material layers extending perpendicular to a vertical axis x. The cavity may further include a confinement region extending between the first reflector and the second reflector, so as to be able to confine an electromagnetic wave. The confinement region may include a single layer material, which is structured so as to create an effective refractive index variation for the electromagnetic wave to be confined, in an average plane of the single layer material, perpendicularly to said vertical axis x. Additional examples are further directed to related microcavity systems and methods of fabrication.

A two-dimensional photonic-crystal surface-emitting laser includes: a two-dimensional photonic-crystal layer; an active layer provided on one surface side of the two-dimensional photonic-crystal layer; and a reflection layer provided on the other surface side of the two-dimensional photonic-crystal layer or on a side opposite to the two-dimensional photonic-crystal layer so as to be spaced apart from the two-dimensional photonic-crystal layer, wherein a distance d between surfaces of the two-dimensional photonic-crystal layer and the reflection layer facing each other is set such that a radiation coefficient difference ??.sub.v=(?.sub.v1??.sub.v0), which is a value obtained by subtracting a radiation coefficient ?.sub.v0 of a fundamental mode having the smallest loss from a radiation coefficient ?.sub.v1 of a first higher order mode having the second smallest loss among the light amplified in the two-dimensional photonic-crystal layer, is 1 cm.sup.?1 or more.

A method of manufacturing a light emitting device includes: disposing a first glass that does not contain a fluorescent material on a light-reflecting member; disposing a fluorescent material containing member on the light-reflecting member via the first glass; fusing the first glass to the fluorescent material containing member at a first temperature to fix the fluorescent material containing member to the light-reflecting member; placing a second glass containing a second fluorescent material on a light emitting surface side of the fluorescent material containing member; fusing the second glass to at least one of the light-reflecting member and the first glass at a second temperature that is lower than the first temperature; and disposing a light emitting element such that light emitted from the light emitting element is irradiated on a light incident surface of the fluorescent material containing member.