A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Edge-emitting laser diodes having high confinement factors and lattice-matched, porous cladding layers are described. The laser diodes may be formed from layers of III-nitride material. A cladding layer may be electrochemically etched to form a porous cladding layer having a high refractive index contrast with an active junction of the device. A transparent conductive oxide layer may be deposited to form a top-side cladding layer with high refractive index contrast and low resistivity.

An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25). Said current protection region has, in the direction running perpendicularly to the associated facets (25), an extension of at least 0.5 m and at most 100 m, and additionally of at least 20% of a resonator length for the laser radiation.

A waveguide structure including a waveguide having a thermally controllable section, and a method of manufacturing the structure. The waveguide structure comprises a plurality of layers. The layers comprise, in order: a substrate (306), a sacrificial layer (305), a lower cladding layer (303), a waveguide core layer (302), and an upper cladding layer (301). The lower cladding layer, waveguide core layer, and upper cladding layer form the waveguide, the waveguide has a waveguide core. The waveguide structure has a continuous via (307) passing through the upper cladding layer, waveguide core layer, and lower cladding layer and running parallel to the waveguide ridge (304) along substantially the whole length of the thermally controllable section. The waveguide structure also has a thermally insulating region (308) in the sacrificial layer extending at least from the via to beyond the waveguide ridge along the whole length of the thermally controllable section. The sacrificial layer comprises a sacrificial material outside of the thermally insulating region, and a thermally insulating gap (308) or thermally insulating material separating the lower cladding layer and substrate inside the thermally insulating region. The structure is manufactured by providing a wet etch to the sacrificial layer through the via in order to remove material from at least the thermally insulating region.

Photonic devices having Al.sub.1-xSc.sub.xN and Al.sub.yGa.sub.1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x0.45 and 0y1.

Photonic devices having Al.sub.1-xSc.sub.xN and Al.sub.yGa.sub.1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x0.45 and 0y1.

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N.sub.2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H.sub.2 gas.

A method of preparing a distributed feedback laser. The distributed feedback laser comprises an active waveguide with a reflective facet. The method comprises: etching a grating into the distributed feedback laser; and etching an output facet into the active waveguide.