Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.

A portable lighting apparatus is provided with a gallium-and-nitrogen containing laser diode based white light source combined with an infrared illumination source which are driven by drivers disposed in a printed circuit board assembly enclosed in a compact housing and powered by a portable power supply therein. The portable lighting apparatus includes a first wavelength converter configured to output a white-color emission and an infrared emission. A beam shaper may be configured to direct the white-color emission and the infrared emission to a front aperture of a compact housing of the portable lighting apparatus. An optical transmitting unit is configured to project or transmit a directional light beam of the white light emission and/or the infrared emission for illuminating a target of interest, transmitting a pulsed sensing signal or modulated data signal generated by the drivers therein. In some configurations, detectors are included for depth sensing and visible/infrared light communications.

Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm.sup.2), which is over one order of magnitude lower than that of previously reported blue laser diodes.

An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains Al.sub.xGa.sub.1-xAs.sub.1-yP.sub.y, where the lattice constant of Al.sub.xGa.sub.1-xAs.sub.1-yP.sub.y is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.

An optical apparatus includes a light emitting device and a substrate. The light emitting device includes a base including a main body portion containing a ceramic material and wire portions exposed from the main body portion on the lower surface of the base, a lid portion fixed to the base so that a hermetically sealed space is defined by the lid portion and the base, a first semiconductor laser element emitting blue light and provided in the hermetically sealed space, a second semiconductor laser element emitting red light and provided in the hermetically sealed space, a third semiconductor laser element emitting green light and provided in the hermetically sealed space, and a collimate lens arranged on paths of the blue light, the red light and the green light. The substrate includes first metallic films electrically connected with the base of the light emitting device via the wire portions.

A light emitting device includes a plurality of semiconductor laser elements, a light-transmissive member, and a wavelength conversion member. Each of the semiconductor laser elements is configured to emit light having a first wavelength. The light-transmissive member includes a plurality of first inclined surfaces and a lower surface. The light-transmissive member is positioned with respect to the semiconductor laser elements so that beams of the light emitted from the semiconductor laser elements enter the light-transmissive member respectively through the first inclined surfaces and exit from the lower surface. The wavelength conversion member is disposed in contact with the lower surface of the light-transmissive member and configured to convert at least a portion of the light exiting from the lower surface to wavelength-converted light having a second wavelength.

A source of white light constructed of a vacuum glass chamber, containing an optically active element, a generator of an IR electromagnetic radiation beam equipped with a laser IR diode, a battery, a focusing lens, and, optionally, a reflector characterized in that the optically active element contained in the vacuum chamber is a thin layer graphene matrix with the thickness of up to 3 mm Embodiments also relate to a method of white light generation by the above-mentioned white light source.

A light emitting device includes a base defining a recess, a lid portion, first and second semiconductor laser elements, and a collimate lens. The lid portion covers the recess so that a hermetically sealed space is defined by the lid portion and the base, the lid portion having a bottom surface fixed to the base and a top surface opposite to the bottom surface. The first and second semiconductor laser elements are provided in the hermetically sealed space. The first and second semiconductor laser elements respectively irradiate first and second lights having first and second peak wavelengths in a visible range. The collimate lens is fixed on the top surface of the lid portion with an adhesive. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes.