This disclosure describes a method of forming a VCSEL with a structural birefringent cavity. This method comprises growing a bottom distributed Bragg reflector (DBR) and a first part of a cavity on a substrate to form a bottom structure comprising a plurality of layers. One or more anisotropic features are etched on a upper layer of the bottom structure to produce a patterned growth interface. A remaining part of the cavity and a top DBR on the patterned growth interface are overgrown to form an epitaxial structure. One or more oxide apertures are formed in the epitaxial structure.

Provided is an optical semiconductor device including a laminate structural body 20 in which an n-type compound semiconductor layer 21, an active layer 23, and a p-type compound semiconductor layer 22 are laminated in this order. The active layer 23 includes a multiquantum well structure including a tunnel barrier layer 33, and a compositional variation of a well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is greater than a compositional variation of another well layer 31.sub.1. Band gap energy of the well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is smaller than band gap energy of the other well layer 31.sub.1. A thickness of the well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is greater than a thickness of the other well layer 31.sub.1.

A semiconductor laser device includes a light emitting unit including an active layer and an n-type semiconductor layer and a p-type semiconductor layer that sandwich the active layer. The n-type semiconductor layer includes a first n-type cladding layer and a second n-type cladding layer. The p-type semiconductor layer includes a first p-type cladding layer and a second p-type cladding layer. The n-type semiconductor layer has a greater thickness than the p-type semiconductor layer. An n-type thickness ratio, which is a ratio of a thickness of the first n-type cladding layer to a thickness of the second n-type cladding layer, is equal to a p-type thickness ratio, which is a ratio of a thickness of the first p-type cladding layer to a thickness of the second p-type cladding layer. The n-type thickness ratio and the p-type thickness ratio are each greater than 1.25 and less than or equal to 3.75.

An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.

Provided is an optical semiconductor device including a laminate structural body 20 in which an n-type compound semiconductor layer 21, an active layer 23, and a p-type compound semiconductor layer 22 are laminated in this order. The active layer 23 includes a multiquantum well structure including a tunnel barrier layer 33, and a compositional variation of a well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is greater than a compositional variation of another well layer 31.sub.1. Band gap energy of the well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is smaller than band gap energy of the other well layer 31.sub.1. A thickness of the well layer 31.sub.2 adjacent to the p-type compound semiconductor layer 22 is greater than a thickness of the other well layer 31.sub.1.

The invention relates to an optoelectronic component (1) that is insensitive to dislocations, comprising:

a semiconductor heterostructure (2) able to emit laser radiation, said semiconductor heterostructure being formed from first semiconductors comprising a cascade of gain-providing active regions (21) in which the inter-band radiative transition is of type II, and

a carrier structure (30) comprising a non-native substrate (3) different from the first semiconductors, said semiconductor heterostructure (2) being formed by epitaxial growth on the carrier structure (30),

wherein the active regions have a dislocation density higher than 10.sup.7 .cm.sup.?2.

This disclosure describes a bottom surface emitting vertical cavity surface emitting laser (BSE VCSEL) with a lithographically defined aperture. The BSE VCSEL may be oxide-free. Two contacts are located above a substrate. An aperture and one or more active regions are located between two DBRs. A first contact is coupled to the substrate and the first DBR, which is below the aperture. A second contact is coupled to the second DBR, which is above the aperture.

To provide a surface-emitting laser that can achieve further reduction of diffraction loss, further improvement of heat dissipation, further improvement of yield, and further improvement of reliability.

To provide a surface-emitting laser including a substrate and a vertical resonator structure formed on the substrate, in which the vertical resonator structure includes at least one element selected from the group consisting of In, Ga, Al, N, As, and P, and includes at least an active layer, an upper DBR layer, a lower DBR layer, the upper DBR layer and the lower DBR layer are formed with the active layer interposed therebetween, and the lower DBR layer includes at least one transparent conductive layer that contains a transparent conductive material including a non III-V semiconductor.

A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.

A photon source, comprising: a semiconductor structure, said semiconductor structure comprising: a first light emitting diode region; and a second region comprising a quantum dot;
the photon source further comprising: a first voltage source configured to apply an electric field across said first light emitting diode region to cause light emission; a second voltage source configured to apply a tuneable electric field across said second region to control the emission energy of said quantum dot; wherein the semiconductor structure is configured such that light emitted from said first light emitting diode region is absorbed in said second region and produces carriers to populate said quantum dot; and
wherein the photon source is configured such that light emitted from the second region exits said photon source.