A semiconductor optical device includes an active layer, the active layer including a plurality of quantum well layers having gain peak wavelengths different from one another in a layering direction thereof, and a plurality of barrier layers, wherein the quantum well layers and the barrier layers are alternately layered over each other, and an n-type dopant has been added in the plurality of quantum well layers having gain peak wavelengths different from one another and in the plurality of barrier layers.

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved.

A semiconductor laser module includes a package; a plurality of semiconductor laser elements provided in the package; a member having a plurality of mounting surfaces on which the semiconductor laser elements are mounted, the mounting surfaces being separated from a bottom surface of the package by respective distances, the distances being gradually different from each other in a manner that the mounting surfaces as a whole form a step-like form; a plurality of lenses collimating respective laser beams emitted from the semiconductor laser elements; a plurality of reflection mirrors reflecting the respective laser beams; a condenser lens unit condensing the laser beams; an optical fiber where the optical beams condensed by the condenser lenses are optically coupled; and an optical filter disposed on optical lines of the respective laser beams reflected by the reflection mirrors and reflecting light having wavelengths different from the wavelengths of the laser beams.

Example implementations relate to mounting optoelectronic devices and wavelength-division multiplexing optical connectors. For example, an implementation includes a transparent interposer having an integrated plurality of lenses. A plurality of optoelectronic devices are mounted to a bottom surface of the transparent interposer, each of the optoelectronic devices being paired to a respective lens of the plurality of lenses. The bottom surface of the transparent interposer is mounted to a substrate within a region of an optical socket. The optical socket receives a filter-based wavelength-division multiplexing (WDM) optical connector. Each lens of the plurality of lenses is paired to a respective filter of the WDM optical connector when the WDM optical connector is mated to the optical socket.

The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected wavelength or narrow range of wavelengths to pass through.

A miniature illuminator is described which is suitable for assembly into mobile electronics devices such as cell phones and computer tablets. Features of the invention overcome the complexity of current miniature illuminators by using single molded structure which includes all the electrical feedthrough connections and has the features necessary for accurate mounting of optical components. The molded structure includes laser safety connections which provide an electrical interrupt signal when the illuminator is damaged in a way that could result in propagation of non-eye safe illuminator beams. In an alternate operation the illuminator provides a signal when a subject gets too close to the illuminator and would receive unsafe VCSEL illuminator beam. The laser safety feature is integrated into the molded Illuminator package so that separate electrically connected structures to achieve this function are eliminated.

Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase. The phase-corrected beams propagate with reduced angular divergence than conventional lasers that are not coherently coupled, and the coherently coupled laser diodes can provide higher beam brightness, enhanced beam parameter product, and superior power coupled into doped fibers in fiber lasers.

A semiconductor laser module includes a semiconductor laser element outputting a laser light; an optical fiber; an optical component disposed at an outer periphery of the optical fiber and fixing the optical fiber; a first-fixing agent fastening the optical component and the optical fiber; a light-absorbing element disposed at an outer periphery of the optical component and fixing the optical component; a first light-blocking portion disposed between an end into which the laser light is incident of the optical fiber and the optical component; and a housing accommodating therein the semiconductor laser element, an end into which the laser light is incident of the optical fiber and the first light-blocking portion. The optical component has an optical transmittance at a wavelength of the laser light, and the light-absorbing element has an optical absorptivity at a wavelength of the laser light.

A laser apparatus includes a plurality of laser modules each generating a laser line in a working plane. The laser modules are juxtaposed so that the laser lines generated by the modules combine into a single laser line. Each of the laser modules includes at least one laser line generator. The laser line generator includes two linear arrays of strips of laser diodes each emitting a focused laser beam. The two linear arrays are arranged parallel to each other so that the strips are staggered. The two sets of parallel laser beams generated by the two linear arrays of strips, respectively, are merged into a single laser line by a set of mirrors. The linear arrays of strips of laser diodes and the mirrors are arranged so that the two sets of laser beams trace optical paths of the same length before being merged into a single laser line.