An apparatus includes at least one multijunction diode laser situated to emit a plurality of beams along respective mutually parallel propagation axes, each beam having an associated mutually parallel slow axes and associated collinear fast axes, a fast axis collimator situated to receive and collimate the plurality of beams along the corresponding fast axes so as to produce corresponding fast axis collimated beams that propagate along associated non-parallel axes, and a reflector situated to receive the plurality of fast axis collimated beams and to reflect the beams so that the reflected fast axis collimated beams propagate along substantially parallel axes.

In one embodiment, a lidar system includes a multi junction light source configured to emit an optical signal. The multi junction light source includes a seed laser diode configured to produce a seed optical signal and a multi junction semiconductor optical amplifier (SOA) configured to amplify the seed optical signal to produce the emitted optical signal. The lidar system also includes a receiver configured to detect a portion of the emitted optical signal scattered by a target located a distance from the lidar system. The lidar system further includes a processor configured to determine the distance from the lidar system to the target based on a round-trip time for the portion of the scattered optical signal to travel from the lidar system to the target and back to the lidar system.

An optical part includes: an optical fiber having a core portion and a cladding portion that is formed around the core portion; a light absorber placed around the optical fiber; and an adhesive member that adheres the light absorber and the optical fiber to each other. Further, the cladding portion includes: a main portion extending along a longitudinal direction and having a main portion cladding diameter; and an input end portion positioned closer to a light input side with respect to the main portion, and an input end face cladding diameter at an input end face of the input end portion is less than the main portion cladding diameter.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

A first semiconductor element (laser diode) and a second semiconductor element (laser diode) are connected to each other in series between a wiring electrically connected to an anode of the first semiconductor element and a wiring electrically connected to a cathode of the second semiconductor element. In this case, each of the first semiconductor element and the second semiconductor element includes a laminated pattern having an emission layer and a plurality of semiconductor layers covering this laminated pattern.

A semiconductor laser device includes a semiconductor layer that includes a light emitting region having a first width and a pad region formed in a region outside the light emitting region and having a second width exceeding the first width, an insulating layer that covers the light emitting region and the pad region, and a wiring electrode that has an internal connection region penetrating through the insulating layer and electrically connected to the light emitting region and an external connection region that covers the pad region across the insulating layer and is to be externally connected to a lead wire.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

A line beam irradiation apparatus (1000) includes a work stage (200), a line beam source (100) for irradiating a work (300) placed on the work stage (200) with a line beam; and a transporting device (250) for moving at least one of the work stage (200) and the line beam source (100) such that an irradiation position of the line beam on the work moves in a direction transverse to the line beam. The line beam source includes a plurality of semiconductor laser devices and a support for supporting the plurality of semiconductor laser devices. The plurality of semiconductor laser devices are arranged along a same line extending in a fast axis direction, and the laser light emitted from emission regions of respective ones of the semiconductor laser devices diverge parallel to the same line to form the line beam.

A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.