Provided are a laser device and a method of transforming laser spectrum, which provide a laser frequency stabilization and significant narrowing a laser spectrum. A laser device includes at least one multiple longitudinal mode laser (L) for generating a laser light having a spectrum of multiple longitudinal modes; at least one high quality factor (high-Q) microresonator (M) optically feedback coupled to the at least one multiple longitudinal mode laser (L); and a tuner (TU) for tuning the spectrum of multiple longitudinal modes of the laser light. The laser device is configured to output an output laser light having an output spectrum with at least one dominant longitudinal laser mode each at a reduced linewidth of the dominant longitudinal laser mode. The laser device allows increasing an emission power of a narrow linewidth lasing without an additional amplification while keeping a compact size of a device with a limited number of optical elements.

A wavelength beam combining device includes: a laser diode stack comprising a plurality of stacked laser diode bars, wherein each laser diode bar comprises a plurality of laser diodes arranged laterally in a row; a light condensing member; a diffraction grating; a resonator mirror; and an output control unit configured to control each of the laser diode bars such that, in every possible mode in which the output control unit controls each laser diode bar to operate such that one or more of the laser diodes emit laser beams and one or more of the laser diodes do not emit laser beams, the one or more laser diodes that emit laser beams are located inward of the one or more laser diodes that do not emit laser beams.

A semiconductor laser device includes: a plurality of semiconductor light emitting elements each of which emits a light beam; a wavelength dispersion element (a diffraction grating) that emits the light beam emitted from each of the plurality of semiconductor light emitting elements to pass through one optical path; a pedestal that supports the wavelength dispersion element; and a presser that fixes the wavelength dispersion element to the pedestal by pressing the wavelength dispersion element. The presser presses on the wavelength dispersion element in a direction perpendicular to a surface on which with the wavelength dispersion element is provided.

A monolithic InP-based PIC having a first photonic assembly that has a first optical splitter-combiner unit having a first end part that is optically connected with a first optical waveguide and a second end part that is optically connected with a first main photonic circuit and a first auxiliary photonic circuit. The first auxiliary photonic circuit has a first laser unit, and a first SOA. The first SOA is configurable to be in a first operational state in which the first SOA allows optical communication between the first laser unit and the first optical splitter-combiner unit, or a second operational state in which the first SOA prevents optical communication between the first laser unit and the first optical splitter-combiner unit. An opto-electronic system including the PIC.

A wavelength beam combining device includes: a light source unit comprising a plurality of laser light sources, each being configured to emit a laser beam with a predetermined wavelength width; a light condensing member configured to condense the laser beams emitted from the light source unit; a diffraction grating on which the laser beams condensed by the light condensing member are incident; a resonator mirror disposed in an optical path of a diffracted beam from the diffraction grating; and an output control unit configured to turn off, among the plurality of laser light sources, at least laser light sources located farthest from an optical axis of the light condensing member, to reduce an output of the wavelength beam combining device relative to an output of the wavelength beam combining device when all the plurality of laser light sources are turned on.

A semiconductor laser element includes a light emission layer and a plurality of waveguides to arranged in one direction. A semiconductor laser device includes the semiconductor laser element and a first base disposed, via a first adhesion layer, on one face in the lamination direction of the semiconductor laser element. The thermal resistance of the first adhesion layer is, in the arrangement direction of the plurality of waveguides to lower on one end portion side than on the other end portion side.

A laser device includes: a plurality of laser diodes that emit laser beams having different wavelengths; a partial reflection mirror that resonates the plurality of laser beams emitted by the plurality of laser diodes; and a wavelength dispersion element that causes the plurality of laser beams incident from the plurality of laser diodes in different orientations of optical axes of the laser beams to travel to the mirror with the optical axes aligned. Each of the plurality of laser diodes is integrally formed with an adjustment component that is rotatable around an emission end of the laser diode.

A tunable external cavity laser with dual gain chips, including: a polarization beam splitter having a beam splitting surface arranged at an angle of 45° with respect to a first direction and a second direction perpendicular to the first direction; a first gain chip arranged in the first direction; a second gain chip arranged in the second direction; a feedback cavity arranged in the first direction, wherein the feedback cavity and the first gain chip are respectively arranged on two opposite sides of the polarization beam splitter, and the feedback cavity includes at least one independent Fabry-Perot etalon, at least one air gap Fabry-Perot cavity and a mirror that are arranged in the first direction. The polarization beam splitter and the two gain chips cooperate to share the feedback cavity, so that a wavelength and a phase may be adjusted, and a larger tuning range may be obtained.

In various embodiments, the concentration and deposition of siloxane materials within components of laser systems, such as laser resonators, is reduced or minimized utilizing mitigation systems that may also supply gas having low siloxane levels into multiple different components in series or in parallel.

The present invention relates to a device for generating laser radiation.

An object of the present invention is to indicate a laser diode which simultaneously has a high degree of efficiency and a low degree of far field divergence.

The diode laser according to the invention comprises a current barrier (5), characterized in that the current barrier (5) extends along a third axis (X), wherein the current barrier (5) has at least one opening, and a first width (W1) of the opening of the current barrier (5) along the third axis (X) is smaller than a second width (W2) of the metal p-contact (8) along the third axis (X).