H03F2203/21106

RF power transistor circuits

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

Doherty combiner

The present invention relates to a Doherty combiner used in a Doherty power amplifier, the Doherty combiner comprising: a phase shift section connected to one end of a carrier amplifier so as to change a phase of an RF signal output from the carrier amplifier; a matching section connected to an output terminal of the Doherty power amplifier so as to impedance-match an output of the Doherty power amplifier; and a bandwidth improvement section connected to one end of a peaking amplifier so as to change at least one of a phase bandwidth and an amplitude bandwidth of the Doherty power amplifier.

Power amplifier module

A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

AMPLIFICATION SYSTEMS AND METHODS WITH ONE OR MORE CHANNELS
20220190784 · 2022-06-16 ·

Systems and methods are provided for amplifying multiple input signals to generate multiple output signals. An example system includes a first channel, a second channel, and a third channel. The first channel is configured to receive one or more first input signals, process information associated with the one or more first input signals and a first ramp signal, and generate one or more first output signals. The second channel is configured to receive one or more second input signals, process information associated with the one or more second input signals and a second ramp signal, and generate one or more second output signals. The first ramp signal corresponds to a first phase. The second ramp signal corresponds to a second phase. The first phase and the second phase are different.

Digital power amplifier
11356069 · 2022-06-07 · ·

A digital power amplifier comprising at least two individually activatable amplifiers connected to an output network comprising a first hybrid coupler. An output of a first amplifier is connected to a first input of the first hybrid coupler and an output of a second amplifier is connected to a second input of the first hybrid coupler such that activating an amplifier of the at least two amplifiers causes the amplifier to load modulate another activated amplifier of at least two amplifiers.

Wideband RF power splitters and amplifiers including wideband RF power splitters

A power splitter for use in an amplifier (e.g., a Doherty amplifier) includes an input terminal, and first and second output terminals. The input terminal is configured to receive an input RF signal, the first output terminal is configured to produce a first RF output signal, and the second output terminal is configured to produce a second RF output signal. The power splitter also includes a first capacitance electrically coupled between the input terminal and the first output terminal, a second capacitance electrically coupled between the input terminal and the second output terminal, a first inductance electrically coupled between the input terminal and a ground reference node, a second inductance electrically coupled between the first output terminal and the ground reference node, a third inductance electrically coupled between the second output terminal and the ground reference node, and a resistance electrically coupled between the first and second output terminals.

METHODS RELATED TO POWER AMPLIFICATION SYSTEMS WITH ADJUSTABLE COMMON BASE BIAS
20230261616 · 2023-08-17 ·

Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.

Power amplifier circuit

A power amplifier circuit includes lower-stage and upper-stage differential amplifying pairs, a combiner, first and second inductors, and first and second capacitors. First and second signals are input into the lower-stage differential amplifying pair. The upper-stage differential amplifying pair outputs first and second amplified signals. The combiner combines the first and second amplified signals. The lower-stage differential amplifying pair includes first and second transistors. A supply voltage is supplied to the collectors of the first and second transistors. The first and second signals are supplied to the bases of the first and second transistors. The upper-stage differential amplifying pair includes third and fourth transistors. A supply voltage is supplied to the collectors of the third and fourth transistors. The emitters of the third and fourth transistors are grounded via the first and second inductors and are connected to the first and second transistors via the first and second capacitors.

RF power transistor circuit

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

POWER AMPLIFIER SYSTEM
20230246609 · 2023-08-03 ·

A power amplifier system is disclosed having a first amplifier with a high-power input and a high-power output. A second amplifier has a low-power input and a low-power output. A reconfigurable mode switch network has a first series switch branch coupled between the high-power output and an RF output, a first shunt branch is coupled between the RF output and a fixed voltage node, and a second series switch branch is coupled between the low-power output and a shared node of the first shunt branch. The shared node separates the first shunt branch into a first shared section that is between the RF output and the shared node and a second shared section that is between the shared node and the fixed voltage node.