Apparatus and methods for a no-load-modulation power amplifier are described. No-load-modulation power amplifiers can comprise multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see essentially no modulation of its load between the power amplifier's fully-on and fully backed-off states. The power amplifiers can operate in symmetric and asymmetric modes. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained. Further improvements can be obtained by combining signals from the amplifiers with hybrid couplers.

Doherty power amplifier (PA) devices (e.g., packages and modules) including integrated output combining networks are disclosed. In embodiments, the Doherty PA device includes a first amplifier die having a first transistor with a first output terminal at which a first amplified signal is generated, a second amplifier die having a second transistor with a second output terminal at which a second amplified signal is generated, and an output combining network. The output combining network includes, in turn, a combining node integrally formed with the second amplifier die and electrically coupled to the second output terminal. At least one die-to-die bond wire electrically couples the first output terminal to the combining node. The at least one die-to-die bond wire has an electrical length, which is results in a 90 degree phase shift imparted to the first amplified signal between the first output terminal and the combining node.

A transistor package for a power amplifier is provided. The transistor package includes a plurality of radio frequency, RF, paths that includes a first RF path and second RF path. Each RF path includes a transistor-carrying die and at least one impedance element. The transistor package includes a circuit portion electrically coupling a first impedance element in the first RF path to a second impedance element in the second RF path where the circuit portion includes at least one resistor.

Systems and methods are provided for amplifying multiple input signals to generate multiple output signals. An example system includes a first channel, a second channel, and a third channel. The first channel is configured to receive one or more first input signals, process information associated with the one or more first input signals and a first ramp signal, and generate one or more first output signals. The second channel is configured to receive one or more second input signals, process information associated with the one or more second input signals and a second ramp signal, and generate one or more second output signals. The first ramp signal corresponds to a first phase. The second ramp signal corresponds to a second phase. The first phase and the second phase are different.

A circuit includes an amplifier and pre-distortion circuit. The amplifier amplifies a modulated signal. The signal pre-distortion circuit performs a feed-forward pre-distortion of the modulated signal in a signal path in which the amplifier resides. The signal pre-distortion circuit includes: i) an envelope detector configured operative to provide an envelope information describing an envelope of the modulated signal; and ii) a built-in test circuit that determines distortion information describing a distortion in the signal path caused by amplitude variations. The signal pre-distortion circuit performs the feed-forward pre-distortion of the modulated signal on the basis of the distortion information.

An amplifying apparatus is provided, which includes a power-source main line, a plurality of amplifying control devices which include an amplifier, a power-source branch line, an over current protector. The amplifier amplifies a high-frequency signal. The power-source branch line is branched from the power-source main line. The over current protector disposed for the power-source branch line is connected to the amplifier and configured to disconnect the power-source branch line based on drive current flowing through the amplifier from the power-source branch line. The power-source main line is common to the plurality of amplifying control devices.

Systems and methods are disclosed herein that provide low-complexity Digital Predistortion (DPD) for a transceiver system that uses an Advanced Antenna System (AAS) to provide analog or hybrid beamforming.

In order to operate a power amplifier for synthesizing a plurality of amplifier circuits with high efficiency, the gate voltages of the field-effect transistors (FETs) of the plurality of amplifier circuits are adjusted according to an individual difference in saturated power between the amplifier circuits. Specifically, the output ratios of the amplifier circuits (AMP-4, 8) with low saturated power are reduced, whereas the output ratios of the amplifier circuits (AMP-2, 6) with high saturated power are increased. Thus, a device is operated with high efficiency.

An amplifier includes amplifier circuits connected in series between a ground and a power supply, each amplifier circuit includes: a transistor; and a first capacitance, one end of which is connected to a drain of the transistor, a first amplifier circuit connected closest to the power supply includes a load connected between the drain of the transistor and the power supply, each of the amplifier circuits except for the first amplifier circuit includes a load connected between the drain of the transistor of an own amplifier circuit and a source of the transistor of an amplifier circuit adjacent to the own amplifier circuit, each of the amplifier circuits except for an amplifier circuit connected farthest from the power supply includes a second capacitance connected between the source of the transistor and the ground, and the second capacitance has a capacitance value larger than a capacitance value of the first capacitance.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a semiconductor die, a radio frequency (RF) signal input terminal, a combining node structure integrally formed with the semiconductor die, and first and second amplifiers (e.g., main and peaking amplifiers) integrally formed with the die. Inputs of the first and second amplifiers are electrically coupled to the RF signal input terminal. A plurality of wirebonds is connected between an output of the first amplifier and the combining node structure. An output of the second amplifier is electrically coupled to the combining node structure (e.g., through a conductive path with a negligible phase delay). A phase delay between the outputs of the first and second amplifiers is substantially equal to 90 degrees. The second amplifier may be divided into two amplifier portions that are physically located on opposite sides of the first amplifier.