A power amplifying apparatus includes a first bias circuit configured to generate a first bias current, a first amplification circuit, configured to receive the first bias current, amplify a signal input to the first amplification circuit through a first node, and output a first amplified signal to a second node, a second bias circuit, configured to generate a second bias current which has a magnitude different from a magnitude of the first bias current, and a second amplification circuit, connected in parallel with the first amplification, configured to receive the second bias current, amplify the signal input through the first node, and output a second amplified signal to the second node. The second amplification circuit is configured to output the second amplified signal with a third-harmonic component that has a phase offsetting a third-order intermodulation distortion (IM3) component included in the first amplified signal, based on the second bias current.

A multi-band power amplifier module includes at least one transmission input terminal, at least one power amplifier circuit that receives a first transmission signal and a second transmission signal through the at least one transmission input terminal, a first filter circuit that allows the first transmission signal to pass therethrough, a second filter circuit that allows the second transmission signal to pass therethrough, at least one transmission output terminal through which the first and second transmission signals output from the first and second filter circuits are output, a transmission output switch that outputs each of the first and second transmission signals output from the at least one power amplifier circuit to the first filter circuit or the second filter circuit, and a first tuning circuit that adjusts impedance matching between the at least one power amplifier circuit and the at least one transmission output terminal.

A transistor includes an active region bounded by an outer periphery and formed in a substrate. The active region includes sets of input fingers, output fingers, and common fingers disposed within the substrate and oriented substantially parallel to one another. The transistor further includes an input port, an output port, a first via connection disposed at the outer periphery of the active region proximate the input port and a second via connection disposed at the outer periphery of the active region proximate the output port. The second via connection has a noncircular cross-section with a second major axis and a second minor axis, the second major axis having a second major axis length, the second minor axis having a second minor axis length that is less than the second major axis length. The second major axis is oriented parallel to a longitudinal dimension of the input, output, and common fingers.

A power amplifier, a radio remote unit (RRU), and a base station, where the power amplifier includes an envelope controller, a main power amplifier, and an auxiliary power amplifier. The main power amplifier and the auxiliary power amplifier both set an envelope voltage output by the envelope modulator as operating voltages, and because the operating voltages of the main power amplifier and the auxiliary power amplifier may be adjusted simultaneously, symmetry of the power amplifier is improved, and an efficiency loss occurring probability is low, thereby enhancing efficiency of the power amplifier.

A generator including a power combiner is provided. The power combiner includes a plurality of inputs, each input connectable to a respective power amplifier for receiving a respective power signal. A plurality of impedance matching circuit branches is connected to a respective one of the plurality of inputs. Each impedance matching circuit branch includes at least one high pass filter section and at least one low pass filter section through which the respective power signal passes. The impedance matching circuit branches are connected so as to combine the power signals from each power amplifier. An output is provided for outputting the combined power signal.

A technique is presented for correcting phase distortion in a digital wireless transmitter. The technique includes: receiving an RF signal in an analog domain by a digital-to-RF modulator; amplitude modulating, the RF signal in accordance with a digital input code; and introducing delay in a signal path traversed by the RF signal before the digital-to-RF modulator using a delay circuit. The duration of the delay depends upon the value of the digital input code and substantially cancels out the phase distortion introduced by the digital wireless transmitter.

A technique is presented for correcting phase distortion in a digital wireless transmitter. The technique includes: receiving an RF signal in an analog domain by a digital-to-RF modulator; amplitude modulating, the RF signal in accordance with a digital input code; and introducing delay in a signal path traversed by the RF signal before the digital-to-RF modulator using a delay circuit. The duration of the delay depends upon the value of the digital input code and substantially cancels out the phase distortion introduced by the digital wireless transmitter.

A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

A digital power amplifier comprising two or more individually activatable amplifiers. The outputs of the amplifiers are connected causing an activated amplifier of the two or more amplifiers to load modulate another activated amplifier of the two or more amplifiers.

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.