A multilayer filter may include a dielectric layer having a top surface, a bottom surface, and a thickness in a Z-direction between the top surface and the bottom surface. The multilayer filter may include a conductive layer formed on the top surface of the dielectric layer. The multilayer filter may include a via assembly formed in the dielectric layer and connected to the conductive layer on the top surface of the dielectric layer. The via assembly may extend to the bottom surface of the dielectric layer. The via assembly may have a length in the Z-direction and a total cross-sectional area in an X-Y plane that is perpendicular to the Z-direction. The via assembly may have an area-to-squared-length ratio that is greater than about 3.25.

A high frequency multilayer filter may include a plurality of dielectric layers and a signal path having an input and an output. The multilayer filter may include an inductor including a conductive layer formed over a first dielectric layer. The inductor may be electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground. The multilayer filter may include a capacitor including a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer. The multilayer filter has a characteristic frequency that is greater than about 6 GHz

A front end module includes a base filter configured to operate as a bandpass filter passing a pass band of an input radio frequency signal; a switch connected to the base filter, and a first notch filter and a second notch filter selectively connected to the base filter through the switch, wherein a stop band of the first notch filter and a stop band of the second notch filter overlap the pass band of the base filter in a band equal to or higher than a center frequency of the pass band of the base filter.

A semiconductor device capable of reducing in size thereof and suppressing degradation in the characteristics of circuit components is provided. The semiconductor device includes an LC circuit comprised of a spiral inductor provided over a semiconductor substrate and a capacitive element coupled with the spiral inductor. The spiral inductor includes a central area encircled with a metal wiring and a peripheral area other than the central area. The capacitive element is formed in an upper-layer or a lower-layer position corresponding to the peripheral area other than the central area.

A variable frequency filter includes a series arm resonant circuit and first and second parallel arm resonant circuits. The series arm resonant circuit is connected between a first connection terminal and a second connection terminal. The first parallel arm resonant circuit is connected to the first connection terminal side of the series arm resonant circuit. In the first parallel arm resonant circuit, a first piezoelectric resonator and a variable capacitor are connected in series to each other. The second parallel arm resonant circuit is connected to the second connection terminal side of the series arm resonant circuit. In the second parallel arm resonant circuit, a second piezoelectric resonator and a variable capacitor are connected in series to each other. The impedance of the first piezoelectric resonator is lower than the impedance of the second piezoelectric resonator. The series arm resonant circuit includes a characteristic adjusting capacitor at the first connection terminal side.

An RF filter (BPF) with an increased bandwidth is provided. The filter comprises a half-lattice topology and a phase shifter (PS) comprising inductively coupled inductance elements in a parallel branch parallel to a first segment (S1) of a signal path (SP) between a first port (P1) and a second port (P2) of the filter.

Certain aspects of the present disclosure provide a filter circuit and techniques for filtering using the filter circuit. The filter circuit generally includes a first filter stage having a first acoustic wave resonator coupled in a series path between a first port of the filter circuit and a second port of the filter circuit, a first inductor-capacitor (LC) tank circuit, a first capacitor coupled between a first terminal of the first acoustic wave resonator and the first LC tank circuit, the first LC tank circuit being coupled between the first capacitor and a reference potential node, and a second capacitor coupled between a second terminal of the first acoustic wave resonator and the first LC tank circuit. In some aspects, the filter circuit includes one or more other filter stages coupled to the first filter stage.

A positive electrode side input loop line (10a) and a positive electrode side output loop line (10b), and a negative electrode side input loop line (11a) and a negative electrode side output loop line (11b) form two sets of coupling loops, and the loop lines of the two sets have the same winding direction, and have the same loop sizes of and relative relationship between the loop lines. A capacitor (3) is connected in series between the positive electrode side input loop line (10a) and the negative electrode side input loop line (11a).

A high pass filter includes: a first resonant circuit including an inductor and a capacitor in parallel between first and second terminals; a second resonant circuit including an inductor and a capacitor in series between a first end of the first resonant circuit and a ground; a third resonant circuit including an inductor and a capacitor in series between a second end of the first resonant circuit and the ground; a fourth resonant circuit disposed between the first end of the first resonant circuit and the first terminal, and including a first acoustic resonator; and a fifth resonant circuit disposed between the second end of the first resonant circuit and the second terminal, and including a second acoustic resonator. Attenuation regions respectively formed by the first, second, and third resonant circuits are arranged in lower frequency regions than attenuation regions respectively formed by the fourth and fifth resonant circuits.

A band pass filter includes filter circuits, first and second intermediate circuits, and a first capacitor. The first intermediate circuit includes an inductor connected between second and third capacitors. The second intermediate circuit includes an inductor connected between third and fourth capacitors. Resonant circuits included in the filter circuit are connected to ground via a common capacitor. Resonant circuits included in the filter circuit are connected to the ground via a common capacitor. The first capacitor is connected between the first and second intermediate circuits.