A method for manufacturing a resonator that effectively addresses variations in resistivity for each wafer. The method for manufacturing a resonator includes forming a Si oxide film on a surface of a degenerated Si wafer, where the Si oxide film has a thickness set that is based on the doping amount of impurity in the degenerated Si wafer.

A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators. Thin hafnium zirconium oxide (HZO) films are engineered with atomic layer deposition (ALD) to demonstrate large piezoelectric ferroelectric properties (piezoelectric coefficient e.sub.31,HZO23e.sub.31,AlN. Various electrical and optical characterization schemes are also used as test-vehicles to characterize ferroelectric and piezoelectric properties, including isolated 10 nm HZO- and 120 nm AlN-transduction ports. The low-temperature and truly conformal nature of ALD process of HZO offers substantial advantages over conventional magnetronsputtered/MOCVD films, including CMOS-compatibility and sidewall transducer integration.

Three-dimensional (3D) micro-scale shells are presented with selectively removed regions/openings and which can be used in sensors and actuators, including gyroscopes. Example shells consisting of a suspended ring-shaped resonator that is supported using multiple beams that are not in the plane of the ring and are attached to a support post can be formed. Shells with various sizes and geometries of selectively removed regions and openings allow the creation of micro electromechanical systems (MEMS) sensors and actuators with a wide range of engineered mechanical and electrical properties. These shells can be used to form stacked 3D structures for various types of MEMS sensor and actuator devices, such as resonant gyroscopes, with sense and drive electrodes that conform to the curved profile of the resonant shell using for gyroscopes. 3D shells formed from a starting parent substrate are released and separated from their parent substrate using a number of techniques.

A signal processing apparatus, being configured for transmitting and receiving coherent parallel optical signals, comprises a transmitter apparatus including a first single soliton micro-resonator device and a modulator device, wherein the first single soliton micro-resonator device is adapted for creating a single soliton providing a first frequency comb, wherein the first frequency comb provides a plurality of equidistant optical carriers with a frequency spacing corresponding to a free spectral range of the first single soliton micro-resonator device, and the modulator device is adapted for modulating the optical carriers according to data to be transmitted, and a receiver apparatus including a coherent receiver device with a plurality of coherent receivers and a local oscillator device providing a plurality of reference optical signals, wherein the coherent receiver device and the local oscillator device are arranged for coherently detecting the transmitted modulated optical carriers, wherein the signal processing apparatus further includes at least one second single soliton micro-resonator device having a free spectral range being equal or approximated to the free spectral range of the first single soliton micro-resonator device and being adapted for creating at least one single soliton providing at least one second frequency comb, wherein the at least one second frequency comb provides at least one of additional optical carriers and the reference optical signals. Furthermore, a signal processing method, including transmitting and receiving coherent parallel optical signals via a communication channel is described.

A microelectromechanical system with at least one partly mobile mass element which is suspended from a fixed support by one or more suspension units. Each suspension unit comprises first springs which extend from the fixed support to the partly mobile mass element, and second springs which also extend from the fixed support to the partly mobile mass element. Each second spring is substantially parallel and adjacent to one first spring. The first springs are electrically isolated from the second springs, and the microelectromechanical system comprises a voltage source configured to apply a frequency tuning voltage between the one or more first springs and the one or more second springs.

A mechanical resonator-based cascadable logic device includes which includes a resonator having a beam with a first fixed end, a second fixed end, and a length between the first and second fixed ends. A first electrode and a second electrode are aligned along a first side of the beam. A third electrode and a fourth electrode are aligned along a second side of the beam and opposite the first and second electrodes. A DC voltage source is coupled to one of the first and second fixed ends of the beam. At least one of the first, second, third, and fourth electrodes is coupled to a first AC voltage source so that a logic operation is performed by activating a second resonant mode of the resonator.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.

A resonance device is provided for reducing the influence on the resonant frequency of the resonance device of the electric charge borne by an insulating film of a frame. The resonance device includes a resonator including a vibration portion and a frame disposed in at least a part of a vicinity of the vibration portion. The frame includes a holding body and an insulating film, with the holding body holding the vibration portion to vibrate and the insulating film being formed above the holding body. A lower cover is provided having a recess forming at least a part of a space in which the vibration portion vibrates. An inner side surface of the insulating film is disposed at a first distance from an inner surface of a side wall defining the recess.