A micro-transfer printable transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side disposed over a sacrificial portion on a source substrate. A top electrode is in contact with the top side and a bottom electrode is in contact with the bottom side. A left acoustic mirror is in contact with the left side and a right acoustic mirror is in contact with the right side. The thickness of the transverse bulk acoustic wave filter is substantially less than its length or width and its length can be greater than its width. The transverse bulk acoustic wave filter can be disposed on, and electrically connected to, a semiconductor substrate comprising an electronic circuit to control the transverse bulk acoustic wave filter and form a composite heterogeneous device that can be micro-transfer printed.

Embodiments of the present disclosure relate generally to MEMS resonators. An exemplary MEMS resonator comprises a resonator beam having a length and a width. The length can be an integer multiple of the width. The integer multiple can be at least two. The resonator is configured to resonate at a frequency upon application of an input signal. The TCF of this resonator can be made close to zero, thus providing a temperature stable resonator. The exemplary MEMS resonator thereby has the advantages of high Q, low polarization voltage, low motional impedance and temperature stability of low frequency resonators while being able resonate at high frequencies of 30 MHz to 30 GHz.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.

A MEMS resonator system has a micromechanical resonant structure and an electronic processing circuit including a first resonant loop that excites a first vibrational mode of the structure and generates a first signal at a first resonance frequency. A compensation module compensates, as a function of a measurement of temperature variation, a first variation of the first resonance frequency caused by the temperature variation to generate a clock signal at a desired frequency that is stable relative to temperature. The electronic processing circuit further includes a second resonant loop, which excites a second vibrational mode of the structure and generates a second signal at a second resonance frequency. A temperature-sensing module receives the first and second signals and generates the measurement of temperature variation as a function of the first variation of the first resonance frequency and a second variation of the second resonance frequency caused by the temperature variation.

Various embodiments may relate to a resonator. The resonator may include a support including a substrate portion, and a membrane portion extending from the substrate portion over a cavity. The resonator may also include a piezoelectric layer on the membrane portion. The resonator may further include an electrode on the piezoelectric layer. The substrate portion may include dopants of a first conductivity type. The membrane portion may include dopants of a second conductivity type different from the first conductivity type. A ratio of a thickness of the membrane portion to a combined thickness of the electrode and the piezoelectric layer may be above 3:1 for temperature compensation.

A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.

A vibrator that includes a silicon substrate, an electrode facing a surface of the silicon substrate, and a piezoelectric body between the silicon substrate and the electrode and that produces contour vibration in a plane along the surface of the silicon substrate in accordance with a voltage applied to the electrode. The vibrator includes one or more substantially rectangular vibration regions each having a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration. The resonator satisfies W/T4 and y=0.85(1/T)+0.570.05 where T is the thickness of the silicon substrate, W is the width of the short side of the vibration region, and y is the resistivity of the silicon substrate.