A resonator system is provided in which a combined overtone resonator device is excited with a two-dimensional mode of mechanical vibration in a cross sectional plane of a piezoelectric plate in response to an alternating voltage applied through an interdigitated electrode. The cross sectional plane extends along the width direction and the thickness direction, and the two-dimensional mode of mechanical vibration is a two-dimensional combined overtone mode of second and third order asymmetrical Lamb-wave overtones.

The present disclosure describes a micromechanical resonator comprising a resonator element (40) having a length (l.sub.1) and a width (w.sub.1) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (41, 43). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side (42) of the resonator element. The first location divides the width (w.sub.1) of the resonator element into a larger portion (w.sub.3) and a smaller portion (w.sub.2) such that a ratio between said smaller portion (w.sub.2) and the whole width (w.sub.1) is in a range of 0.10 to 0.28. The second location is at a longer side (44). The second location divides the length (l.sub.1) of the resonator element into a larger portion (l.sub.3) and a smaller portion (l.sub.2) such that a ratio between said smaller portion (l.sub.2) and the whole length (l.sub.1) is in a range of 0.36 to 0.48.

MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

A MEMS device and a corresponding operating method. The MEMS device is equipped with an oscillatory micromechanical system, which is excitable in a plurality of useful modes, the oscillatory micromechanical system including at least one system component, which is excitable in at least one parasitic spurious mode by a superposition of the useful modes. An adjusting device is provided, which is configured in such a way that it counteracts the parasitic spurious mode by application of an electromagnetic interaction to the system component.

An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.

A dual-mode resonator, devices employing the dual-mode resonator, and the methods of making the resonator and the devices are disclosed. Embodiments include a dual-mode resonator including a semiconductor substrate; a material on the semiconductor substrate, having a cavity formed therein; a seed layer over the cavity in a V-shape, wherein sides of the V-shape form an angle of 15 to 25 degrees with a horizontal line; a bottom electrode on the seed layer; an acoustic layer on the bottom electrode; a top electrode on the acoustic layer; and a mass loading layer on the top electrode; and a cap over the dual-mode resonator.

The present disclosure describes a micromechanical resonator comprising a resonator element (40) having a length (l.sub.1) and a width (w.sub.1) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (41, 43). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side (42) of the resonator element. The first location divides the width (w.sub.1) of the resonator element into a larger portion (w.sub.3) and a smaller portion (w.sub.2) such that a ratio between said smaller portion (w.sub.2) and the whole width (w.sub.1) is in a range of 0.10 to 0.28. The second location is at a longer side (44). The second location divides the length (l.sub.1) of the resonator element into a larger portion (l.sub.3) and a smaller portion (l.sub.2) such that a ratio between said smaller portion (l.sub.2) and the whole length (l.sub.1) is in a range of 0.36 to 0.48.

An electromechanical resonator including a drive electrode set having at least one pair of alternating pole interdigitated drive electrodes and including a sense electrode set having at least one pair of alternating pole interdigitated sense electrodes.

The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling C.sub.x/C.sub.o goes as the reciprocal of mass and stiffness, the hollow disk structure has a considerably stronger electromechanical coupling than a solid one at the same frequency, and thus raises C.sub.x/C.sub.o without excessive gap-scaling. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations.