Systems and methods for phasing line holders are described herein. In certain embodiments, an apparatus includes a groove in a conductive body. Additionally, the apparatus includes a phasing line for electrically coupling a plurality of components, the phasing line extending through the groove. Further, the apparatus includes a holder inserted into the groove, the holder maintaining the phasing line at a specific position in relation to a plurality of groove surfaces, wherein a plurality of holder surfaces apply sufficient pressure to the plurality of groove surfaces to secure the holder within the groove.

An elastic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The IDT electrode includes a busbar electrode extending in an elastic wave propagation direction and electrode fingers connected to the busbar electrode and extending in a direction perpendicular or substantially perpendicular to the elastic wave propagation direction. The piezoelectric substrate includes a groove extending along the elastic wave propagation direction. The groove is provided on a side across the busbar electrode in the perpendicular or substantially perpendicular direction from a side at which the electrode fingers are located.

An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. A phonon device is fabricated on the IC die that is configured to emit or to receive phonons that have a range of ultrasonic frequencies. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range that includes at least a portion of the range of ultrasonic frequencies. A phononic channel is located in the phononic bandgap structure between the phonon device and a surface of the encapsulated IC.

There is disclosed a surface acoustic wave sensor. An interdigital transducer (IDT) and a first reflector are formed on a surface of a piezoelectric substrate. The first reflector is displaced from the IDT in a direction of acoustic wave propagation. The first reflector includes a plurality of elongate reflective elements including a first reflective element and N additional reflective elements, where N is a positive integer. A long axis of each of the reflective elements is perpendicular to the direction of acoustic wave propagation, and a distance between adjacent reflective elements along the direction of acoustic wave propagation is a linear function of distance from the first reflective element along the direction of acoustic wave propagation.

Methods of forming a shear-mode chemical/physical sensor for liquid environment sensing on V-shaped grooves of a [100] crystal orientation Si layer and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] Si layer over a substrate; forming an acoustic resonator over and along the V-shaped grooves, the acoustic resonator including a first metal layer, a thin-film piezoelectric layer, and a second metal layer in an IDT pattern or a sheet; and forming at least one functional layer along a slope of the acoustic resonator.

A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

An elastic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The IDT electrode includes a busbar electrode extending in an elastic wave propagation direction and electrode fingers connected to the busbar electrode and extending in a direction perpendicular or substantially perpendicular to the elastic wave propagation direction. The piezoelectric substrate includes a groove extending along the elastic wave propagation direction. The groove is provided on a side across the busbar electrode in the perpendicular or substantially perpendicular direction from a side at which the electrode fingers are located.

A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. A phonon device is fabricated on the IC die that is configured to emit or to receive phonons that have a range of ultrasonic frequencies. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range that includes at least a portion of the range of ultrasonic frequencies. A phononic channel is located in the phononic bandgap structure between the phonon device and a surface of the encapsulated IC.

In an elastic wave device that utilizes longitudinal wave leaky elastic wave, an IDT electrode is provided on a first or second principal surface of a piezoelectric layer, an energy confinement layer that is laminated on the second principal surface of the piezoelectric layer so as to support the piezoelectric layer and confines energy of the longitudinal wave leaky elastic wave into the piezoelectric layer is provided, a thickness of the piezoelectric layer is or less when represents a wavelength determined according to an electrode finger pitch of the IDT electrode, and a groove is provided in at least one of the first and second principal surfaces of the piezoelectric layer, and the IDT electrode includes a portion in the groove.