A circuit module 2 comprises: a wiring structure 4; an electronic component 6a, 6b arranged on the upper surface of the wiring structure 4; an insulating resin layer 8 which is provided on the upper surface of the wiring structure 4 and in which the electronic component 6a, 6b is embedded; and a metal layer 10 provided on a side surface S1 of the insulating resin layer 8 and a side surface S2 of the wiring structure 4. The surface roughness of the side surface S1 of the insulating resin layer 8 is expressed as R1. The surface roughness of the side surface S2 of the wiring structure 4 is expressed as R2. R1 and R2 differ from each other.

An acoustic wave device includes a substrate, a functional element provided on the substrate, a cover layer provided on or above the substrate to cover the functional element, and a protection layer that covers the cover layer. The cover layer includes a curved portion that is curved to protrude outward. A hollow space is defined between the curved portion and the substrate, and the functional element is provided in the hollow space. The acoustic wave device also includes a conductive portion that is provided between the curved portion and the protection layer and extends along a surface of the curved portion.

Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter includes an element substrate having a top surface, a bottom surface, a side surface, and piezoelectric body. A circuit including a plurality of SAW resonators is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate having a top surface and a bottom surface, and a side wall including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.

An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned between the piezoelectric layer and the substrate. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

An acoustic wave device includes a first acoustic wave element including a first substrate having piezoelectricity at least in a portion thereof, a first functional electrode provided on a first surface of the first substrate, and a first wiring conductor electrically connected to the first functional electrode. The first acoustic wave element further includes a relay electrode on the first surface of the first substrate and electrically connected to a second wiring conductor, and a ground electrode on the first surface of the first substrate and electrically connected to the first functional electrode. The ground electrode is between at least one of the first functional electrode and the first wiring conductor, and the relay electrode, and is electrically insulated from the relay electrode.

An acoustic wave element of the present disclosures has a piezoelectric substrate and an acoustic wave resonator on a main surface of the piezoelectric substrate. The acoustic wave resonator is one being divided into a first IDT electrode and a second IDT electrode which are electrically connected to the first IDT electrode. The first IDT electrode includes a first comb-shaped electrode on the signal input side and a second comb-shaped electrode on the signal output side. The second IDT electrode includes a third comb-shaped electrode on the signal input side and a fourth comb-shaped electrode on the signal output side. The direction of arrangement of the third comb-shaped electrode and the fourth comb-shaped electrode from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from the direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode.

A multi-layer piezoelectric substrate silicon package comprises a bottom filter including a cap wafer of the bottom filter, and a device wafer of the bottom filter, the cap wafer of the bottom filter and the device wafer of the bottom filter each having a first through silicon via configured to provide an electrical path from a first bottom terminal of the device wafer of the bottom filter to a first top terminal of the cap wafer of the bottom filter.

Disclosed are apparatuses and techniques for fabricating single or multi-die packages with sealed enclosures. In one or more aspects an apparatus includes a die; a perimeter metallization disposed on a perimeter of the die; a package substrate; and a seal coupled to the perimeter metallization and the package substrate, configured to seal the die to the package substrate.

A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.