A method of fabricating a semiconductor device can include providing an integrated circuit electrically coupled to a metallization pad on a semiconductor wafer, the integrated circuit and the metallization pad covered by a cap structure. A channel can be cut in a portion of the cap structure that covers the metallization pad using a cutting tool having a tip surface and a beveled side surface to expose an upper surface of the metallization pad in the channel extending in a first direction and a conductive material can be deposited in the channel to ohmically contact the upper surface of the metallization pad in the channel.

A method of fabricating an electronics package includes forming a cavity in a first surface of a semiconductor substrate, forming one or more passive devices on the semiconductor substrate, forming a microelectromechanical device on a piezoelectric substrate, and bonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity.

An electronic device includes a pop-up device configured to be inserted into a main body of the electronic device in an inserted state, including a gas sensor including a sensor block for sensing a gas, and configured to expose the sensor block to an outer portion of the electronic device in a pop-up state; a power supplier arranged on an outer portion of the pop-up device, configured to supply electric power to the gas sensor; and a connection controller configured to control a connection state of the pop-up device, to block supply of electric power to the gas sensor when the pop-up device is in the inserted state and to supply electric power to the gas sensor when the pop-up device is in the pop-up state, including one or more terminals formed on the pop-up device that move together with the pop-up device when the pop-up device moves.

A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with higher resolution and accuracy. Additional benefits offered by the structure include smaller size and lower cost.

A micromechanical system (MEMS) resonator includes a base substrate. A piezoelectric layer has a first electrode attached to a first surface of the piezoelectric layer and a second electrode attached to a second surface of the piezoelectric layer opposite the first electrode. The first electrode is bounded by a perimeter edge. A patterned acoustic mirror is formed on a top surface of the first electrode opposite the piezoelectric layer, such that the patterned acoustic mirror covers a border strip of the top surface of the first electrode at the perimeter edge and does not cover an active portion of the top surface of the first electrode.

An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240° C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.

A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.

The present disclosure provides a bulk acoustic wave resonator comprising a piezoelectric layer and a top electrode disposed on a first surface of the piezoelectric layer. The bulk acoustic wave resonator has a central region, a first outer region, and a first raised frame region between the central region and the first outer region. The top electrode has a first thickness within the central region, a second thickness within the first raised frame region, and a third thickness within the first outer region, the second thickness being greater than both the first thickness and the third thickness. A die, filter, radio-frequency module and wireless mobile device are also provided.

A bulk acoustic wave resonator having a central region, an outer region, and a raised frame region between the central region and the outer region is disclosed. The bulk acoustic wave resonator can include a piezoelectric layer and a top electrode over the piezoelectric layer. The top electrode is disposed at least in the central region, the outer region, and the raised frame region. The top electrode is configured such that a resonant frequency in the outer region is higher than a resonant frequency in the central region.

An electronic device package includes a lower surface for conducting electronic signals, a first solder bond pad having a first size disposed on the lower surface, and a plurality of second solder bond pads having second sizes smaller than the first size disposed on the lower surface and surrounding the first solder bond pad.