A method and a band reject filter (BRF) using as acoustic resonators at least one of bulk acoustic wave (BAW) resonators and film bulk acoustic resonators (FBAR) are provided. The BRF includes at least one substrate having at least one of a plurality of capacitors formed thereon, the plurality of capacitors having capacitances selected to achieve a particular band reject response. The BRF also includes at least one die. At least one of a plurality of acoustic wave resonators are formed thereon. The plurality of acoustic wave resonators are one of BAW resonators and FBARs and are designed to have the same resonant frequency. A plurality of conductors between the substrate and the die are positioned to electrically connect the acoustic wave resonators and the capacitors.

A packaging method and a packaging structure of a film bulk acoustic resonator are provided. The packaging method includes: providing a resonant cavity main structure including a first substrate and a film bulk acoustic resonant structure having a first cavity formed therebetween; forming a resonator cover by providing a second substrate and forming an elastic bonding material layer containing a second cavity and an initial opening; bonding the resonant cavity main structure and the resonator cover together through the elastic bonding material layer and removing elasticity of the elastic bonding material layer, where the second cavity is at least partially aligned with the first cavity; forming a through-hole containing the initial opening and a hole connected with the initial opening and passing through the resonator cover; and forming a conductive interconnection layer covering a sidewall of the through-hole and a portion of a surface of the resonator cover.

A method of fabricating a semiconductor device can include providing an integrated circuit electrically coupled to a metallization pad on a semiconductor wafer, the integrated circuit and the metallization pad covered by a cap structure. A channel can be cut in a portion of the cap structure that covers the metallization pad using a cutting tool having a tip surface and a beveled side surface to expose an upper surface of the metallization pad in the channel extending in a first direction and a conductive material can be deposited in the channel to ohmically contact the upper surface of the metallization pad in the channel.

An electronic component includes a substrate, a functional portion, external connection conductor portions, and first and second heat-conducting portions. The functional portion is located on first principal surface of the substrate and portion generates heat during operation. The external connection conductor portions are located directly on the first principal surface of the substrate or located below the first principal surface without direct contact with the substrate. The second principal surface of the substrate includes first and second regions. When viewed in plan in a thickness direction of the substrate, the first region does not overlap the functional portion, and the second region coincides with the functional portion. The first heat-conducting portion is located directly on all or a portion of the first region or located over all or a portion of the first region without direct contact with the substrate. The second heat-conducting portion is located directly on a region that is a portion of the second principal surface of the substrate and including at least a portion of the second region or located over the region without direct contact with the substrate and is discretely spaced away from the first heat-conducting portion when viewed in plan in the thickness direction of the substrate.

The vibrator element includes at least one vibrating arm, and a weight provided to the vibrating arm, the weight is provided with at least one processing scar, when an axis which overlaps a center in a width direction of the vibrating arm, and which extends along an extending direction of the vibrating arm is a central axis, and an axis which overlaps a centroid of the vibrating arm, and which extends along the extending direction of the vibrating arm is a centroid axis, the processing scar is formed in at least an area at the centroid axis side with respect to the central axis, and S1>S2 an area of the processing scar located at the centroid axis side with respect to the central axis is S1, and an area of the processing scar located at an opposite side to the centroid axis with respect to the central axis is S2.

The vibrator element includes a vibrating arm provided with an arm part, and a weight part which has a weight, the weight is provided with at least one processing scar, when an axis which overlaps a center in a width direction of the vibrating arm, and which extends along an extending direction of the vibrating arm is a central axis, and an axis which overlaps a centroid of the vibrating arm, and which extends along the extending direction of the vibrating arm is a centroid axis, the processing scar is formed in at least an area at an opposite side to the centroid axis, and S1<S2 an area of the processing scar located at the centroid axis side with respect to the central axis is S1, and an area of the processing scar located at an opposite side to the centroid axis with respect to the central axis is S2.

A family of resonators and other devices which employ virtual electrodes using pixel based projection across a gap onto a material. In many embodiments, the pixel is projected onto a piezoelectric material, such as quartz crystal, by an integrated circuit die placed opposite a face of the crystal. The die projects a single pixel of electromagnetic energy onto the crystal, which vibrates and produces its own electromagnetic energy which is received by the pixel. Pixel projection onto other materials, including non-resonant materials, is also disclosed. The pixel based projected electrodes may be used in combination with, or in lieu of, conventional metal electrodes. The single pixel may be controlled in gain and phase in order to achieve specific desired resonator response characteristics. Many types of devices using pixel based electrode projection are disclosed—including resonators having one or more single-pixel virtual electrodes, and other types of devices.

An acoustic resonator filter package includes an acoustic resonator including a piezoelectric layer, a first electrode disposed on a first surface of the piezoelectric layer, and a second electrode disposed on a second surface of the piezoelectric layer; a first substrate having an upper surface on which the acoustic resonator is disposed, the first substrate comprising a first coupling member surrounding the acoustic resonator; a filter spaced apart from the acoustic resonator in an upward direction; a second substrate having a lower surface on which the filter is disposed, the second substrate including a second coupling member disposed above the first coupling member; and a connection member connecting the first coupling member and the second coupling member to each other, the connection member being made of a material different from a material of which the first coupling member and the second coupling member are made.

Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.