A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

Embodiments of the present application provide a wafer level surface acoustic wave filter and a package method, the surface acoustic wave filter includes a wafer, an electrode layer, a supporting wall and a cover plate; wherein, the wafer includes a substrate layer and a piezoelectric thin film layer combined together by wafer bonding, the electrode layer is arranged on a surface of the piezoelectric thin film layer, the supporting wall surrounds between the piezoelectric thin film layer and the cover plate to form a sealed cavity; and the cover plate includes at least a first material layer, which uses the same material as the substrate layer.

The present disclosure provides an integration method and integration structure for a control circuit and a Surface Acoustic Wave (SAW) filter. The integration method includes: providing a base, the base being provided with a control circuit; forming a cavity on the base; providing an SAW resonating plate, an input electrode and an output electrode being arranged on a surface of the SAW resonating plate; facing the surface of the SAW resonating plate towards the base, such that the SAW resonating plate is bonded to the base and seals the cavity; and electrically connecting the control circuit to the input electrode and the output electrode. The present disclosure may control the SAW filter through the control circuit provided on the base, and may avoid the problems of the complex electrical connection process, large insertion loss and the like due to a fact that the existing SAW filter is integrated to the Printed Circuit Board (PCB) as a discrete device.

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

Methods of making packaged surface acoustic wave devices are provided. The method may include forming a photosensitive resin coat over a cavity-defining structure encapsulating a surface acoustic wave device. The photosensitive resin coat may be formed using a spin-coating process, and then patterned to form a desired shape. Portions of the photosensitive resin may be removed from areas near the edge of the die, to facilitate separation of a wafer into individual dies. The method may also include forming a conductive structure using a plating process, where the conductive structure is located between the resin coat and the cavity defining structure. The photosensitive resin can include a phenol resin. The packaged surface acoustic wave devices made using a photosensitive resin coat may be relatively thin, and may have a height of less than 220 micrometers.

Systems and methods for packaging an acoustic device in an integrated circuit (IC) include walls formed on a wiring substrate. The walls have a height which is just shorter than an expected height of a solder bump on the acoustic device after solder reflow. The walls are positioned on either side of the acoustic device and a small portion lies underneath an exterior edge of the acoustic device such that a relatively small gap is formed between an upper surface of the wall and the lower surface of the acoustic device. By providing a small gap between wall and acoustic device, encroachment by an encapsulating material into a keep out zone of the acoustic device is minimized.

Aspects of this disclosure relate to a surface acoustic wave filter with an integrated temperature sensor. The integrated temperature sensor can be a resistive thermal device configured as a reflective grating for a surface acoustic wave resonator, for example. A radio frequency system can provide over temperature protection by reducing a power level of a radio frequency signal provided to the surface acoustic wave filter responsive to an indication of temperature provided by the integrated temperature sensor satisfying a threshold.

A method of fabricating a semiconductor device can include providing an integrated circuit electrically coupled to a metallization pad on a semiconductor wafer, the integrated circuit and the metallization pad covered by a cap structure. A channel can be cut in a portion of the cap structure that covers the metallization pad using a cutting tool having a tip surface and a beveled side surface to expose an upper surface of the metallization pad in the channel extending in a first direction and a conductive material can be deposited in the channel to ohmically contact the upper surface of the metallization pad in the channel.

A method for manufacturing an electronic component module includes a support member preparation step, an electrode forming step, a component arrangement step, and a resin molding step. In the electrode forming step, a columnar electrode is formed on a conductive layer of a support member. In the component arrangement step, an electronic component is arranged on the support member. In the resin molding step, a resin structure that covers an outer peripheral surface of the columnar electrode and at least a portion of an outer peripheral surface of the electronic component is molded on the conductive layer. In the electrode forming step, the columnar electrode and the conductive layer are made of different materials. The method further includes a heat treatment step of heating the conductive layer and the columnar electrode so that mutual diffusion occurs between the conductive layer and the columnar electrode.

A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.