Patent classifications
H03H9/1064
STACKED TEMPERATURE COMPENSATED ACOUSTIC WAVE DEVICE WITH HIGH THERMAL CONDUCTIVITY
An electronic device comprises a first substrate having a first surface bonded to a first surface of a second substrate, one or more acoustic wave devices disposed on the first surface of each of the first substrate and the second substrate, and a thermally conductive layer disposed on a second surface of the first substrate opposite the first surface of the first substrate. The thermally conductive layer has a higher thermal conductivity than a material of which the first substrate is formed to reduce an operating temperature of the first substrate.
ACOUSTIC WAVE RESONATOR WITH LASER-DRILLED VIAS
A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.
METHOD OF MAKING ACOUSTIC WAVE RESONATOR WITH LASER-DRILLED VIAS
A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.
STACKED ACOUSTIC WAVE RESONATOR PACKAGE WITH LASER-DRILLED VIAS
A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.
RF Filter for Use at 5G Frequencies
An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240 C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.
HIGH-FREQUENCY MODULE
A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate.
Acoustic wave device, module, and multiplexer
An acoustic wave device includes: first and second terminals located on a first surface of a first substrate; a third terminal that is located on the first surface and is a ground terminal; series resonators located on a second surface of the first substrate and electrically connected in series with a path between the first and second terminals; a parallel resonator that is located on the second surface and has a first end electrically connected to the path and a second end electrically connected to the third terminal; and a fourth terminal located on the first surface, at least a part of the fourth terminal overlapping with, in a thickness direction of the first substrate, at least one of one or more first series resonators of the series resonators, the one or more first series resonators having both ends to which other series resonators are electrically connected.
Electronic component and method of manufacturing the same
An electronic component includes: a substrate; a device chip, in which a functional element is located on a lower surface thereof, that is mounted on an upper surface of the substrate so that the functional element and the upper surface of the substrate are opposite to each other via an air gap; a ring-shaped metal layer that is located on the upper surface of the substrate, surrounds the device chip in a plan view, and has a protruding part located along an outer periphery thereof, an outer side surface of the ring-shaped metal layer being higher than an inner side surface thereof; a metal sealer that surrounds the device chip in the plan view, and is bonded on an upper surface of the ring-shaped metal layer; and a metal film that is located on side surfaces of the metal sealer and the ring-shaped metal layer.
High-frequency module
A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate.
Multiplexer
A multiplexer includes: a filter located on a surface of a substrate and including first series and parallel resonators and a first wiring line; and another filter located on another surface of another substrate and including second series and parallel resonators and a second wiring line, each of first resonators among the second series and parallel resonators overlapping with the first series and parallel resonators, and/or the first wiring line, each of second resonators other than the first resonators among the second series and parallel resonators overlapping with none of the first series and parallel resonators and the first wiring line, when capacitances of series and parallel resonators in first basic sections including the first resonators are represented by Cs1 and Cp1, and capacitances of series and parallel resonators in second basic sections not including the first resonators are represented by Cs2 and Cp1, Cp1/Cs1 being less than Cp2/Cs2.