A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.

An acoustic wave device, and an acoustic wave filter and electronics module including the same. The acoustic wave device comprises a first interdigital transducer electrode having a first bus bar and a first plurality of electrode fingers extending from the first bus bar, the first bus bar having a width of 3 μm or less in a direction parallel to the extension of the first plurality of electrode fingers, and a second interdigital transducer electrode having a second bus bar and a second plurality of electrode fingers extending from the second bus bar and interleaved with the first plurality of electrode fingers, the second bus bar having a width of 3 μm or less in a direction parallel to the extension of the second plurality of electrode fingers. The acoustic wave device allows for improvements in power durability when used in an acoustic wave filter, without an increase in size of the acoustic wave filter.

An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a transversal velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode. A dielectric material with a periodic structure contributes to the formation of the periodic structure of the velocity profile.

An acoustic wave device includes: a first substrate; a first acoustic wave filter located on a first surface of the first substrate; a pad that is located on the first surface and electrically separated from the first acoustic wave filter in the first surface; a ground pattern that is located on the first surface, and is located between the pad and the first acoustic wave filter in the first surface; and a second acoustic wave filter that is electrically connected to the pad, and at least partially overlaps with the first acoustic wave filter in plan view.

A high-frequency device includes: a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers; a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate; and an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate.

An acoustic wave device includes: a first piezoelectric substrate; a first IDT that includes a plurality of first electrode fingers and is located on a first surface of the first piezoelectric substrate; a second piezoelectric substrate that is located above the first surface; and a second IDT that is located on a second surface of the second piezoelectric substrate, and includes a plurality of second electrode fingers that are non-parallel to the plurality of first electrode fingers, the second surface of the second piezoelectric substrate facing the first surface across an air gap.

An acoustic wave device that includes a spinel layer, a piezoelectric layer, a temperature compensating layer between the spinel layer and the piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of λ. The piezoelectric layer can have a thickness that is less than λ. In some embodiments, the spinel layer can be a polycrystalline spinel layer.

A radio frequency module includes a switch circuit that includes selection terminals, a filter that allows the signal in the first frequency band to pass therethrough, a filter that allows the signal in the second frequency band to pass therethrough, a phase adjustment circuit that is connected to the selection terminal and the filter, and a phase adjustment circuit that is connected to the selection terminal and the filter. The filter includes an acoustic wave resonator that is formed on a substrate that has piezoelectricity. The filter includes an acoustic wave resonator that is formed on a substrate that has piezoelectricity. At least one of circuit elements that are included in the phase adjustment circuit is formed on the substrate. At least one of circuit elements that are included in the phase adjustment circuit is formed on the substrate.

A SAW element includes a piezoelectric substrate, a support substrate attached to a bottom surface of the piezoelectric substrate, and an IDT electrode on a top surface of the piezoelectric substrate. A resonance frequency and an anti-resonance frequency of a resonator including the IDT electrode are kept between a frequency of a lowest frequency bulk wave spurious and a frequency of a next lowest frequency bulk wave spurious.

A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.