A manufacturing method is provided for a resonant device that includes a resonator having a vibrating portion that vibrates according to a voltage applied to an electrode of the resonator. The method includes forming an adjusting film made of molybdenum oxide in a displacement region having a greater displacement caused by vibrations when the voltage is applied than a displacement of another region in the vibrating portion. The method further includes adjusting a frequency of the resonator by removing at least part of the adjusting film with laser.

A resonance device that includes a MEMS substrate including a resonator, an upper lid, and a bonding portion bonding the MEMS substrate and the upper lid to seal a vibration space of the resonator. The bonding portion includes a eutectic layer containing a eutectic alloy as a main component thereof. The eutectic alloy is composed of a first metal containing aluminum as a main component thereof, a second metal of germanium or silicon, and a third metal of titanium or nickel.

Provided are micromechanical resonators and resonator systems including the micromechanical resonators. The micromechanical resonators may each include a supporting beam including a fixed end fixed on a supporting member and a loose end configured to vibrate, and a lumped mass arranged on the loose end, wherein the loose end has a width greater than a width of the fixed end, and a width of the lumped mass is greater than that the width of the fixed end.

A MEMS device that includes a substrate including an element and a connection wiring electrically connected to the element, and a connection portion electrically connected to the connection wiring. The connection portion is formed of a eutectic alloy of a first metal and a second metal. A line width of the connection wiring is smaller than a width of the connection portion when a main surface of the substrate is viewed in a plan view.

A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 10.sup.19 cm.sup.3, and preferably between 10.sup.19 cm.sup.3 and 10.sup.21 cm.sup.3.

The present disclosure provides a super-regenerative transceiver with a feedback element having a controllable gain. The super-regenerative transceiver utilizes the controllable gain to improve RF signal data sensitivity and improve RF signal data capture rates. Super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. Super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

To realize a compact device that detects phase or controls phase or an amplitude with high sensitivity, a signal controller includes: a linear conductor having a first end fixed to a negative electrode and a second end serving as a free end; a positive electrode facing the free end with a small gap therebetween; a first signal source that applies a voltage between the negative electrode and the positive electrode, the voltage applied being variable; a driving electrode that applies an electric field to a space around the conductor, the electric field having a component perpendicular to the lengthwise direction of the conductor; and a second signal source that applies an AC signal to the driving electrode. The signal processor can be a device for controlling or modulating phase or amplitude.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.