An oscillation module includes an SAW filter, and a high-pass filter formed in an integrated circuit, the high-pass filter has a coil part, a capacitance part, and a first interconnection adapted to connect the coil part and the capacitance part to each other, and the capacitance part includes a capacitance array.

A bias circuit is provided that is configure to control the bias for a diode-connected transistor operating in the sub-threshold region to produce a gate-to-source voltage. A differential tuning voltage derived from the gate-to-source voltage tunes a plurality of varactors.

A device includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage can be applied to the back gate of the FET.

An electronic component such as a voltage controllable reconfigurable capacitor or transistor is formed by printing one or more layers of ink on a non-conductive substrate. Ferroelectric ink or semi-conductive ink is printed and conductive resistive or dielectric ink is printed on a s same or different layers. Reconfigurability is achieved by printing resistive biasing circuitry wherein when a changing voltage is applied to the biasing circuitry, an electronic property of the electronic component changes in response to the changing voltage.

A voltage controlled oscillator comprises a negative resistance, a first inductor, a fixed capacitor, and a frequency control component. The frequency control component comprises at least one varactor and at least a second inductor connected in series with the at least one varactor. A magnitude of an inductance of the second inductor is selected such that the frequency control component has an effective capacitance range larger than a capacitance range of the at least one varactor.

A single-chip tunable bandpass filter is provided having a bandpass filter circuit with all tuning components for the bandpass filter circuit formed on the single-chip to provide a programmed center frequency for the tunable bandpass filter. The bandpass filter circuit may include, but is not limited to, a plurality of serially coupled singe stage biquad filter circuits coupled to an input formed on the single-chip and configured to provide a bandpass filtered output signal to an output formed on the single-chip. The bandpass filtered output may be provided by an output buffer formed on the single-chip. The single-chip includes at least one tuning input to receive data for tuning stored in a data register formed on the single-chip. The data register provides control bits to the tuning components that include a programmable resistor responsive to the control bits to vary the programmable resistor to adjust programmed center frequency.

A power amplifier can include an input stage that includes a first amplifying transistor having an input node and an output node, such that a signal at the input node has a first power level and an amplified signal at the output node has a second power level. The power amplifier can further include a second stage implemented relative to the output node that includes a second amplifying transistor, and an adjustable frequency resonant circuit implemented relative to an input of the second stage, configured to store energy of the amplified signal at the second power level.

This invention provides a mobile terminal and a network searching method for overcoming crystal aging issue. The method includes the step of: searching network by invoking parameters stored in a first area of a volatile RAM; if the searching is failed, searching network by invoking parameters stored in a second area of the volatile RAM; if the searching is failed and the number of network searches is larger than a first predetermined value, reacquiring parameters and searching network; if the searching is succeeded, updating the parameters in the first area with the reacquired parameters. By this method, the invention can effectively solve the problems caused by crystal aging or defective crystals, and increases the robustness of the network searching.

Disclosed are a metal-semiconductor-metal two-dimensional electron gas varactor (MSM-2DEG) and a method of manufacturing the same. There is provided an MSM-2DEG varactor having an asymmetric structure, which includes a first gate formed on a semiconductor layer, and a second gate spaced apart at a predetermined distance from the first gate and formed on the semiconductor layer, wherein the first gate and the second gate are different in shape and gate length.

A single-chip tunable bandpass filter is provided having a bandpass filter circuit with all tuning components for the bandpass filter circuit formed on the single-chip to provide a programmed center frequency for the tunable bandpass filter. The bandpass filter circuit may include, but is not limited to, a plurality of serially coupled singe stage biquad filter circuits coupled to an input formed on the single-chip and configured to provide a bandpass filtered output signal to an output formed on the single-chip. The bandpass filtered output may be provided by an output buffer formed on the single-chip. The single-chip includes at least one tuning input to receive data for tuning stored in a data register formed on the single-chip. The data register provides control bits to the tuning components that include a programmable resistor responsive to the control bits to vary the programmable resistor to adjust programmed center frequency.