In an embodiment a ring oscillator circuit includes a chain of cascade-coupled inverter stages coupled between an oscillator supply voltage node and a reference voltage node, the oscillator supply voltage node configured to provide an oscillator supply voltage, a current generator circuit coupled between the oscillator supply voltage node and a system supply voltage node configured to provide a system supply voltage, the current generator circuit being configured to inject a current into the oscillator supply voltage node and a biasing circuit including a first bias control transistor and a second bias control transistor coupled in series between the reference voltage node and the oscillator supply voltage node, wherein the first bias control transistor is configured to selectively couple the reference voltage node and the oscillator supply voltage node in response to the oscillator control signal being indicative that the ring oscillator circuit is in an inactive operation state.

A true random number generator circuit includes a ring oscillator and a plurality of sampling circuits. The ring oscillator includes a plurality of series-connected stages coupled together in a ring. An output of a last stage of the ring oscillator is coupled to an input of a first stage of the ring oscillator. A sampling circuit of the plurality of sampling circuits has an input coupled to a node located between two adjacent stages of the plurality of series-connected stages. Every node of the ring oscillator is coupled to a corresponding sampling circuit of the plurality of sampling circuits. In another embodiment, a method for generating a random number is provided.

Various implementations described herein are directed to a device with a voltage-controlled oscillator that receives an enable signal, receives a reset signal, and provides internal pulse signals including one or more coarse internal pulse signals and multiple fine internal pulse signals. The device may have a coarse sampler that receives the one or more coarse internal pulse signal and provides a coarse sampled output signal. The device may have a fine sampler that receives the multiple fine internal pulse signals and provides a fine sampled output signal.

Methods and devices for determining integrated circuit (IC) device degradation over time are provided. Transistors are the basic building blocks of IC devices. The degradation of the transistors in IC devices over time leads slowly to decreased switching speeds. To monitor the condition of an IC device as it ages, oscillator circuitry operating at switching frequencies of various circuits in the IC device may be included and monitored for changes in switching frequency over time. A degraded condition of the IC device may be determined when the change in switching frequency exceeds a threshold value.

A digitally controlled oscillator (DCO) includes; a current mirror configured to generate a supply current in response to a bias voltage matching a reference current, a variable resistor connected to the current mirror through a first node outputting the reference current and configured to provide a variable resistance in response to a first control signal, an oscillation circuit connected to the current mirror through a second node outputting the supply current and configured to generate an oscillation signal in response to the supply current, and a feedback circuit configured to control the bias voltage in relation to at least one of a voltage at the first node and a voltage at the second node.

A voltage controlled oscillator (VCO) has a VCO core and a tuning bank. The tuning bank includes first and second tuning capacitors. A main switch is coupled between the first and second tuning capacitors. The tuning bank also includes control switches that receive a control signal to selectively activate the tuning bank. The main switch receives a level-shifted control signal to activate the tuning bank.

A switch circuit of an embodiment includes a high frequency switch, a first charge pump circuit, a boost signal generation circuit, and a second charge pump circuit. The high frequency switch switches transmission and reception of a high frequency signal. The first charge pump circuit generates a first voltage and a second voltage biased to the high frequency switch. When an edge of an input signal is detected, the boost signal generation circuit generates a first boost signal for temporarily increasing drive capacity of the first charge pump circuit. When the first boost signal is input, the second charge pump circuit operates to temporarily increase the drive capacity of the first charge pump circuit.

Circuits and methods involve an integrated circuit (IC) device, a plurality of application-specific sub-circuits, and a plurality of instances of a measuring circuit. The application-specific sub-circuits are disposed within respective areas of the IC device. Each instance of the measuring circuit is associated with one of the application-specific sub-circuits and is disposed within a respective one of the areas of the device. Each instance of the measuring circuit further includes a ring oscillator and a register for storage of a value indicative of an interval of time. Each instance of the measuring circuit is configured to measure passage of the interval of time based on a first clock signal, count oscillations of an output signal of the ring oscillator during the interval of time, and output a value indicating a number of oscillations counted during the interval of time.

An electronic device comprises a regulator, and an oscillator and a resistor coupled to the regulator. The electronic device further comprises a feedback controller that includes a differential amplifier coupled between the oscillator, the resistor, and the regulator. The feedback controller is configured to apply a control voltage to the regulator in response to a resistor voltage upon the resistor and an oscillator voltage upon the oscillator. The feedback controller can be coupled to control a substantially equal voltage upon the resistor and the oscillator.

The present disclosure provides a process corner detection circuit and a process corner detection method. The process corner detection circuit includes: M ring oscillators disposed inside a chip, M≥1, where types of N-type transistors in the M ring oscillators are not exactly the same, and types of P-type transistors in the M ring oscillators are not exactly the same; transistor types of the M ring oscillators include all transistor types used in the chip; the ring oscillators include symmetric ring oscillators and asymmetric ring oscillators; types of N-type transistors and P-type transistors in the symmetric ring oscillators are the same; and types of N-type transistors and P-type transistors in the asymmetric ring oscillators are different.