Patent classifications
H03K3/356017
Semiconductor device, display device, and electronic device
A level shifter including a transistor that can be formed through the same process as a display portion is provided. A semiconductor device serves as a level shifter including transistors having the same conductivity type. The semiconductor device includes a so-called MIS capacitor in which metal, an insulator, and a semiconductor are stacked as a capacitor for boosting an input signal. Since the MIS capacitor is used, the gate-source voltage of a transistor for generating an output signal can be increased. Thus, boosting operation to generate the output signal can be performed more surely.
Dimmer interface circuit and buffer stage circuit thereof
A dimmer interface circuit includes a buffer stage circuit and a PWM control circuit. The buffer stage circuit converts a dimming input signal to a dimming buffer signal. The buffer stage circuit includes: a power rail generation circuit, which generates a power rail according to the dimming input signal adaptively, so that the dimming input signal is between a high level voltage and a low level voltage of the power rail; and an amplification circuit, which receives the dimming input signal, to generate the dimming buffer signal. The power rail supplies electrical power to the amplification circuit, wherein the amplification circuit operates within a range between the high level voltage and the low level voltage. The PWM control circuit converts the dimming buffer signal to a PWM dimming signal, so as to adjust a brightness of an LED module.
Input circuit of a flip-flop and associated manufacturing method
An input circuit of a flip-flop includes: a first gate strip, a second gate strip and a third gate strip. The first gate strip is a co-gate terminal of a first PMOS and a first NMOS; the second gate strip is disposed immediately adjacent to the first gate strip, and a co-gate terminal of a second PMOS and a second NMOS. The first PMOS and the second PMOS share a doping region as a co-source terminal. The first NMOS and the second NMOS share a doping region as a co-source terminal. The third gate strip is disposed immediately adjacent to the second gate strip. The third gate strip is a co-gate terminal of a third PMOS and a third NMOS. The second PMOS and the third PMOS share a doping region as a co-drain terminal. The second NMOS and the third NMOS share a doping region as a co-drain terminal.
Output buffer circuit for display driving apparatus
Disclosed is an output buffer circuit for a display driving apparatus, which generates an output voltage by using a bias current controlled by digital-to-analog conversion for interpolation data, the output buffer circuit including a decoder configured to output control data obtained by decoding interpolation data, and an output circuit configured to output an output voltage by using a bias current having the amount of current controlled by digital-to-analog conversion for the control data.
Level shifter
In an example, an apparatus includes a level-shifting circuit and a ramp detector. The level-shifting circuit has a current choke and a transistor coupled across the current choke, the level-shifting circuit adapted to be coupled to a first voltage source. The ramp detector has a ramp detector input adapted to be coupled to the first voltage source and a ramp detector output coupled to the transistor, the ramp detector adapted to be coupled to a second voltage source.
INPUT CIRCUIT OF A FLIP-FLOP AND ASSOCIATED MANUFACTURING METHOD
An input circuit of a flip-flop includes: a first gate strip, a second gate strip and a third gate strip. The first gate strip is a co-gate terminal of a first PMOS and a first NMOS; the second gate strip is disposed immediately adjacent to the first gate strip, and a co-gate terminal of a second PMOS and a second NMOS. The first PMOS and the second PMOS share a doping region as a co-source terminal. The first NMOS and the second NMOS share a doping region as a co-source terminal. The third gate strip is disposed immediately adjacent to the second gate strip. The third gate strip is a co-gate terminal of a third PMOS and a third NMOS. The second PMOS and the third PMOS share a doping region as a co-drain terminal. The second NMOS and the third NMOS share a doping region as a co-drain terminal.
LOW-JITTER FREQUENCY DIVISION CLOCK CLOCK CIRCUIT
The present disclosure provides a low-jitter frequency division clock circuit, including: a clock control signal generation circuit, to generate clock signals having different phases; a low-level narrow pulse width clock control signal generation circuit, to generate a low-level narrow pulse width clock control signal; a high-level narrow pulse width clock control signal generation circuit, to generate a high-level narrow pulse width clock control signal; and a frequency division clock generation circuit, to generate a frequency division clock signal according to low-level narrow pulse width clock control signal and high-level narrow pulse width clock control signal. The delay from a clock input end to an output end of low-jitter frequency division clock circuit is up to three logic gates. Compared with traditional divide-by-2 frequency division clock circuits based on D-flip-flop, the low-jitter frequency division clock circuit of the present disclosure has fewer logic gates, a shorter delay, and lower jitter.
DYNAMIC HIGH VOLTAGE (HV) LEVEL SHIFTER WITH TEMPERATURE COMPENSATION FOR HIGH-SIDE GATE DRIVER
Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.
DIMMER INTERFACE CIRCUIT AND BUFFER STAGE CIRCUIT THEREOF
A dimmer interface circuit includes a buffer stage circuit and a PWM control circuit. The buffer stage circuit converts a dimming input signal to a dimming buffer signal. The buffer stage circuit includes: a power rail generation circuit, which generates a power rail according to the dimming input signal adaptively, so that the dimming input signal is between a high level voltage and a low level voltage of the power rail; and an amplification circuit, which receives the dimming input signal, to generate the dimming buffer signal. The power rail supplies electrical power to the amplification circuit, wherein the amplification circuit operates within a range between the high level voltage and the low level voltage. The PWM control circuit converts the dimming buffer signal to a PWM dimming signal, so as to adjust a brightness of an LED module.
Systems and methods for providing bi-directional signal level shifting
A bi-directional level shift circuit shifts signal levels between a first signal line and a second signal line. The circuit includes a first transistor and a second transistor. The first transistor includes a first gate connected to the second signal line, a first source connected to the first signal line, and a first drain connected to a voltage rail which supplies voltage. The second transistor includes a second gate connected to the voltage rail, a second source connected to the first signal line, and a second drain connected to the second signal line.