An input receiver for stepping down a high power domain input signal for a high power domain powered by a high power supply voltage into an output signal for a low power domain includes a waveform splitter. The waveform splitter splits the high power domain input signal into a high voltage signal and a low voltage signal. A high voltage input receiver receives the high voltage signal to produce a received high voltage that is level shifted into a first input signal. A low voltage input receiver receives the low voltage signal to produce a second input signal. A logic circuit generates the output signal from the first input signal and the second input signal.

An input-output (I/O) receiver includes a receiving terminal, a first N-type metal-oxide-semiconductor (NMOS) transistor, a reformation circuit, and a compensation unit. The receiving terminal is coupled with an external voltage signal. The first NMOS transistor has a source electrode coupled with the receiving terminal and a gate electrode coupled with a first power supply voltage. The reformation circuit is configured to reform a voltage signal transmitted from a drain electrode of the first NMOS transistor. The compensation unit includes a first PMOS transistor, a second PMOS transistor, and a second NMOS transistor. Moreover, the compensation unit is configured to provide a compensation voltage to a voltage signal at the drain electrode of the first NMOS transistor thereby a maximum level of the voltage signal at the drain electrode of the first NMOS transistor reaches the first power supply voltage.

An input-output (I/O) receiver includes a receiving terminal, a first N-type metal-oxide-semiconductor (NMOS) transistor, a reformation circuit, and a compensation unit. The receiving terminal is coupled with an external voltage signal. The first NMOS transistor has a source electrode coupled with the receiving terminal and a gate electrode coupled with a first power supply voltage. The reformation circuit is configured to reform a voltage signal transmitted from a drain electrode of the first NMOS transistor. The compensation unit includes a first PMOS transistor, a second PMOS transistor, and a second NMOS transistor. Moreover, the compensation unit is configured to provide a compensation voltage to a voltage signal at the drain electrode of the first NMOS transistor thereby a maximum level of the voltage signal at the drain electrode of the first NMOS transistor reaches the first power supply voltage.

A method for fabricating a semiconductor chip includes forming a plurality of conducting pads at a front face of a substrate, thinning a rear face of the substrate, etching openings under each conducting pad from the rear face, depositing a layer of a dielectric on walls and a bottom of the openings, forming a conducting material in the openings, and forming a conducting strip on the rear face. The conducting strip is electrically connected to the conducting material of each of the openings. The etching is stopped when the respective conducting pad is reached.

A method for fabricating a semiconductor chip includes forming a plurality of conducting pads at a front face of a substrate, thinning a rear face of the substrate, etching openings under each conducting pad from the rear face, depositing a layer of a dielectric on walls and a bottom of the openings, forming a conducting material in the openings, and forming a conducting strip on the rear face. The conducting strip is electrically connected to the conducting material of each of the openings. The etching is stopped when the respective conducting pad is reached.

A gate driver circuit for a half bridge or full bridge output driver stage having a high side branch connected to one or more high side transistors and a low side branch connected to one or more low side transistors. A high side gate driver and a low side gate driver receive input signals at a low voltage level and output signals at a high voltage level as gate driving signals for the high side transistors and low side transistors. Each of the high side and the low side branches of the gate driver includes a set-reset latch having a signal output that is fed as a gate signal to the corresponding transistor of the half bridge or full bridge driver. A differential capacitive level shifter circuit receives the input signals at a low voltage level and outputs high voltage signals to drive the set and reset inputs of the set-reset latch.

A display device and a power management chip are provided. The power management chip includes a rising-edge trigger, detecting rising edges of a pulse signal; a first counter, configured to calculate the number of the rising edges; a falling-edge trigger, detecting falling edges of the pulse signal; a second counter, configured to calculate the number of the falling edges of the pulse signal; an adder, configured to sum up the number of the rising edges and the number of the falling edges of the pulse signal; and a digital-to-analog converter, electrically connected to the adder, configured to convert to a target voltage based on the sum obtained by the adder. In such a way, the poweron time of the power management chip is reduced.

A display device and a power management chip are provided. The power management chip includes a rising-edge trigger, detecting rising edges of a pulse signal; a first counter, configured to calculate the number of the rising edges; a falling-edge trigger, detecting falling edges of the pulse signal; a second counter, configured to calculate the number of the falling edges of the pulse signal; an adder, configured to sum up the number of the rising edges and the number of the falling edges of the pulse signal; and a digital-to-analog converter, electrically connected to the adder, configured to convert to a target voltage based on the sum obtained by the adder. In such a way, the poweron time of the power management chip is reduced.

An input signal having a logic low level at a first voltage and a logic high level at a second voltage is received by a Schmitt trigger. A voltage generator outputs a reference voltage generated from a third voltage that is higher than the second voltage. A first transistor coupled between the third voltage and a power supply node of the Schmitt trigger is biased by the reference voltage to apply a fourth voltage to the power supply node of the Schmitt trigger that is dependent on the reference voltage. The reference voltage has a value which causes the fourth voltage to be less than or equal to the second voltage. A second transistor coupled between the input signal and the input of the Schmitt trigger circuit is also biased by the reference voltage to control the logic high level voltage of the input signal at the Schmitt trigger.

An assembly includes a signal input, a signal output, a pull-up stack coupled to the signal input and to the signal output, a pull-down stack coupled to the signal input and to the signal output, and a hysteresis assembly coupled to the pull-up stack and to the pull-down stack. The pull-up stack comprises a pair of metal oxide semiconductor field-effect transistors (transistors) coupled in series, each transistor of the pair of transistors comprising a gate coupled to the signal input. The pull-down stack comprises a plurality of transistors coupled in series, the plurality of transistors comprising: a first transistor comprising a gate coupled to the signal input, a second transistor comprising a gate coupled to the signal input, and a third transistor. The hysteresis assembly comprises a pair of transistors, each transistor of the pair of transistors of the hysteresis assembly having a gate coupled to the signal output.