H03K2005/00208

GATED TRI-STATE INVERTER, AND LOW POWER REDUCED AREA PHASE INTERPOLATOR SYSTEM INCLUDING SAME, AND METHOD OF OPERATING SAME
20210305975 · 2021-09-30 ·

A phase interpolating (PI) system includes: a phase-interpolating (PI) stage configured to receive first and second clock signals and a multi-bit weighting signal, and generate an interpolated clock signal, the PI stage being further configured to avoid a pull-up/pull-down (PUPD) short-circuit situation by using the multi-bit weighting signal and a logical inverse thereof (multi-bit weighting_bar signal); and an amplifying stage configured to receive and amplify the interpolated clock signal, the amplifying stage including a capacitive component; the capacitive component being tunable; and the capacitive component having a Miller effect configuration resulting in a reduced footprint of the amplifying stage.

MULTIPLE ADJACENT SLICEWISE LAYOUT OF VOLTAGE-CONTROLLED OSCILLATOR
20210281249 · 2021-09-09 ·

Methods and systems are described for generating multiple phases of a local clock at a controllable variable frequency, using loop-connected strings of active circuit elements. A specific embodiment incorporates a loop of four active circuit elements, each element providing true and complement outputs that are cross-coupled to maintain a fixed phase relationship, and feed-forward connections at each loop node to facilitate high frequency operation. A particular physical layout is described that maximizes operating frequency and minimizes clock pertubations caused by unbalanced or asymmetric signal paths and parasitic node capacitances.

Oscillator device
10992288 · 2021-04-27 · ·

In an embodiment an oscillator device includes a ring oscillator circuit with at least one delay stage with an output of a last delay stage fed back to an input of a first delay stage, wherein each of the delay stages is configured to receive a charging current and to provide a delay that is dependent on the charging current and at least one of the delay stages includes a metal-oxide-semiconductor field-effect transistor and a bias circuit including an output terminal coupled to an input terminal of the ring oscillator circuit, wherein the bias circuit is configured to receive a temperature-independent reference voltage and includes a current source with a main NMOS-transistor, the current source configured to provide a control current to the ring oscillator circuit which is proportional to a difference of the temperature-independent reference voltage and a gate-source voltage of the main NMOS-transistor, and wherein the gate-source voltage of the main NMOS-transistor includes a negative temperature coefficient.

Multiple adjacent slicewise layout of voltage-controlled oscillator

Methods and systems are described for generating multiple phases of a local clock at a controllable variable frequency, using loop-connected strings of active circuit elements. A specific embodiment incorporates a loop of four active circuit elements, each element providing true and complement outputs that are cross-coupled to maintain a fixed phase relationship, and feed-forward connections at each loop node to facilitate high frequency operation. A particular physical layout is described that maximizes operating frequency and minimizes clock pertubations caused by unbalanced or asymmetric signal paths and parasitic node capacitances.

Gated tri-state inverter, and low power reduced area phase interpolator system including same, and method of operating same

A phase interpolating (PI) system includes: a PI stage configured to receive first and second clock signals and a multi-bit weighting signal, and generate an interpolated clock signal; and an amplifying stage configured to receive and amplify the interpolated clock signal, the amplifying stage including a capacitive component. The capacitive component is tunable to exhibit non-zero capacitances. The capacitive component has a Miller effect configuration resulting in a reduced footprint of the amplifying stage.

Oscillator Device
20200328733 · 2020-10-15 ·

In an embodiment an oscillator device includes a ring oscillator circuit with at least one delay stage with an output of a last delay stage fed back to an input of a first delay stage, wherein each of the delay stages is configured to receive a charging current and to provide a delay that is dependent on the charging current and at least one of the delay stages includes a metal-oxide-semiconductor field-effect transistor and a bias circuit including an output terminal coupled to an input terminal of the ring oscillator circuit, wherein the bias circuit is configured to receive a temperature-independent reference voltage and includes a current source with a main NMOS-transistor, the current source configured to provide a control current to the ring oscillator circuit which is proportional to a difference of the temperature-independent reference voltage and a gate-source voltage of the main NMOS-transistor, and wherein the gate-source voltage of the main NMOS-transistor includes a negative temperature coefficient.

MULTIPLE ADJACENT SLICEWISE LAYOUT OF VOLTAGE-CONTROLLED OSCILLATOR
20200321915 · 2020-10-08 ·

Methods and systems are described for generating multiple phases of a local clock at a controllable variable frequency, using loop-connected strings of active circuit elements. A specific embodiment incorporates a loop of four active circuit elements, each element providing true and complement outputs that are cross-coupled to maintain a fixed phase relationship, and feed-forward connections at each loop node to facilitate high frequency operation. A particular physical layout is described that maximizes operating frequency and minimizes clock pertubations caused by unbalanced or asymmetric signal paths and parasitic node capacitances.

GATED TRI-STATE INVERTER, AND METHOD OF OPERATING SAME
20240014811 · 2024-01-11 ·

A gated tri-state (G3S) inverter includes: first, second and third transistors of a first dopant type (D1 transistors) and first, second and third transistors of a second dopant type (D2 transistors) serially connected between a first reference voltage and second reference voltage, the second dopant type being different than the first dopant type; gate terminals of an alpha one of the noted D1 transistors and an alpha one of the noted D2 transistors being configured to receive an input signal; gate terminals of a beta one of the noted D1 transistors and a beta one of the noted D2 transistors being configured to receive a gating signal; a gate terminal of a gamma one of the noted D2 transistors being configured to receive an enable signal; and a gate terminal of a gamma one of the noted D1 transistors being configured to receive an enable_bar signal.

Delay adjustment circuits

Methods, systems, and devices for delay adjustment circuits are described. Amplifiers (e.g., differential amplifiers) may act like variable capacitors (e.g., due to the Miller-effect) to control delays of signals between buffer (e.g., re-driver) stages. The gains of the amplifiers may be adjusted by adjusting the currents through the amplifiers, which may change the apparent capacitances seen by the signal line (due to the Miller-effect). The capacitance of each amplifier may be the intrinsic capacitance of input transistors that make up the amplifier, or may be a discrete capacitor. In some examples, two differential stages may be inserted on a four-phase clocking system (e.g., one on 0 and 180 phases, the other on 90 and 270 phases), and may be controlled differentially to control phase-to-phase delay.

Gated tri-state inverter, and method of operating same

A gated tri-state (G3S) inverter includes: first, second and third transistors of a first dopant type (D1 transistors) and first, second and third transistors of a second dopant type (D2 transistors) serially connected between a first reference voltage and second reference voltage, the second dopant type being different than the first dopant type; gate terminals of an alpha one of the noted D1 transistors and an alpha one of the noted D2 transistors being configured to receive an input signal; gate terminals of a beta one of the noted D1 transistors and a beta one of the noted D2 transistors being configured to receive a gating signal; a gate terminal of a gamma one of the noted D2 transistors being configured to receive an enable signal; and a gate terminal of a gamma one of the noted D1 transistors being configured to receive an enable_bar signal.