A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.

An output circuit outputs communication signals and communicates with an external device ED, and includes: a PNP first transistor, which is capable of outputting a collector current as the communication signals; and a first current source, which is capable of changing a base current of the first transistor, and which reduces the base current to a predetermined current value after the first transistor is turned on and before the first transistor is turned off.

An output circuit outputs communication signals and communicates with an external device ED, and includes: a PNP first transistor, which is capable of outputting a collector current as the communication signals; and a first current source, which is capable of changing a base current of the first transistor, and which reduces the base current to a predetermined current value after the first transistor is turned on and before the first transistor is turned off

System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period.

System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period.

Unique systems, methods, techniques and apparatuses of a reverse-conducting IGBT (RC-IGBT) are disclosed. One exemplary embodiment is a circuit comprising a series connection of controllable switch components where at least one of the controllable switch components is an RC-IGBT. The circuit is operated by applying a pre-trigger pulse to the gate electrode of the RC-IGBT during reverse conduction of the RC-IGBT at a first time instant, the pre-trigger pulse corresponding to a turn-on gate pulse. Next, a turn-on gate pulse is applied at a second time instant to the other controllable switch component of the series connection for controlling the other controllable switch component to a conductive state such that the pre-trigger pulse and the turn-on gate pulse overlap, and ending the pre-trigger pulse after a delay time at the third time instant. The delay time is the time period when the turn-on gate pulse and the pre-trigger pulse overlap.

Unique systems, methods, techniques and apparatuses of a reverse-conducting IGBT (RC-IGBT) are disclosed. One exemplary embodiment is a circuit comprising a series connection of controllable switch components where at least one of the controllable switch components is an RC-IGBT. The circuit is operated by applying a pre-trigger pulse to the gate electrode of the RC-IGBT during reverse conduction of the RC-IGBT at a first time instant, the pre-trigger pulse corresponding to a turn-on gate pulse. Next, a turn-on gate pulse is applied at a second time instant to the other controllable switch component of the series connection for controlling the other controllable switch component to a conductive state such that the pre-trigger pulse and the turn-on gate pulse overlap, and ending the pre-trigger pulse after a delay time at the third time instant. The delay time is the time period when the turn-on gate pulse and the pre-trigger pulse overlap.